Amid the AI trend, the significance of high-value-added DRAM represented by HBM continues to grow.

HBM (High Bandwidth Memory) is a type of graphics DDR memory that boasts advantages such as high bandwidth, high capacity, low latency, and low power consumption compared to traditional DRAM chips. It accelerates AI data processing speed and is particularly suitable for high-performance computing scenarios like ChatGPT, making it highly valued by memory giants in recent years.

Memory is also representing one of Korea’s pillar industries, and to seize the AI opportunity and drive the development of the memory industry, Korea has recently designated HBM as a national strategic technology.

The country will provide tax incentives to companies like Samsung Electronics. Small and medium-sized enterprises in Korea can enjoy up to a 40% to 50% reduction, while large enterprises like Samsung Electronics can benefit from a reduction of up to 30% to 40%.

Overview of HBM Development Progress Among Top Manufacturers

The HBM market is currently dominated by three major storage giants: Samsung, SK Hynix, and Micron. Since the introduction of the first silicon interposer HBM product in 2014, HBM technology has smoothly transitioned from HBM, HBM2, and HBM2E to HBM3 and HBM3e through iterative innovation.

According to research by TrendForce, the mainstream HBM in the market in 2023 is HBM2e. This includes specifications used in NVIDIA A100/A800, AMD MI200, and most CSPs’ self-developed acceleration chips. To meet the evolving demands of AI accelerator chips, various manufacturers are planning to launch new products like HBM3e in 2024, expecting HBM3 and HBM3e to become the market norm.

The progress of HBM3e, as outlined in the timeline below, shows that Micron provided its 8hi (24GB) samples to NVIDIA by the end of July, SK hynix in mid-August, and Samsung in early October.

As for the higher-spec HBM4, TrendForce expects its potential launch in 2026. With the push for higher computational performance, HBM4 is set to expand from the current 12-layer (12hi) to 16-layer (16hi) stacks, spurring demand for new hybrid bonding techniques. HBM4 12hi products are set for a 2026 launch, with 16hi models following in 2027.

Meeting Demand, Manufacturers Actively Expand HBM Production

As companies like NVIDIA and AMD continue to introduce high-performance GPU products, the three major manufacturers are actively planning the mass production of HBM with corresponding specifications.

Previously, media reports highlighted Samsung’s efforts to expand HBM production capacity by acquiring certain buildings and equipment within the Samsung Display’s Cheonan facility.

Samsung plans to establish a new packaging line at the Cheonan plant dedicated to large-scale HBM production. The company has already invested KRW 10.5 trillion in the acquisition of the mentioned assets and equipment, with an additional investment of KRW 700 billion to KRW 1 trillion.

Micron Technology’s Taichung Fab 4 in Taiwan was officially inaugurated in early November 2023. Micron stated that Taichung Fab 4 would integrate advanced probing and packaging testing functions to mass-produce HBM3e and other products, thereby meeting the increasing demand for various applications such as artificial intelligence, data centers, edge computing, and the cloud. The company plans to start shipping HBM3e in early 2024.

In its latest financial report, SK Hynix stated that in the DRAM sector in 2023, its main products DDR5 DRAM and HBM3 experienced revenue growth of over fourfold and fivefold, respectively, compared to the previous year.

At the same time, in response to the growing demand for high-performance DRAM, SK Hynix will smoothly carry out the mass production of HBM3e for AI applications and the research and development of HBM4.

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• Manufacturers Anticipate Completion of NVIDIA’s HBM3e Verification by 1Q24; HBM4 Expected to Launch in 2026, Says TrendForce
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(Photo credit: SK Hynix)

Sam Altman, the CEO of OpenAI, the developer of the ChatGPT, is reportedly expected to visit Korea on January 26th. Altman may hold meetings with top executives from Samsung Electronics and SK Group to strengthen their collaboration on High-Bandwidth Memory (HBM).

According to sources cited by The Korea Times, Sam Altman is making a slight adjustment for the potential meeting details with Samsung Electronics’ Chairman Lee Jae-yong and SK Group’s Chairman Chey Tae-won. 

OpenAI is set to engage in discussions with Samsung Electronics and SK Group to collaboratively develop artificial intelligence (AI) semiconductors, as part of OpenAI’s strategy to reduce heavy reliance on the AI chip leader NVIDIA.

Reportedly, Altman visited Korea in June of last year, and this upcoming visit is expected to last only about six hours. Most of the time is anticipated to be spent in closed-door meetings with leaders of Korean chip companies or other high-profile executives. 

Altman is keen on strengthening relationships with Korean startups and chip industry players, as it contributes to OpenAI’s development of large-scale language models, powering ChatGPT. OpenAI unveiled its latest model, GPT-4 Turbo, at the end of last year and is currently proceeding with planned upgrades to related services.

Regarding this matter, The Korea Times also cited a spokesman at SK Group, indicating that SK Group also did not confirm whether Chey and Altman will meet.

“Nothing specific has been confirmed over our top management’s schedule with Altman,” an official at SK Group said.

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(Photo credit: OpenAI)

Ennostar, a Taiwanese group focusing on the R&D and manufacturing of Micro LED, LED and compound semiconductor, has announced on January 19th a NTD 670 million (roughly USD 21.36 million) sale of the planned Micro LED production facility in Zhunan, Taiwan.

Its subsidiary, EPISTAR, is anticipated to expedite Micro LED development by integrating existing resources in alternative locations.

According to TechNews’ report, Chin-Yung Fan, chairman of EPISTAR, anticipates “symbolic revenue” from Micro LED starting this year. He notes that in 2021, with the rise of Micro LED and Mini LED, existing facilities were insufficient. While planning to build new facilities based on customer demand and market predictions, the pandemic delayed many new technologies.

Following the integration of Ennostar’s factory resources, which are now available for EPISTAR’s use, the decision has been made to sell the Zhunan facility.

During an earnings call in 2023, Ennostar mentioned that the initial capacity demand for Micro LED is still low. Consequently, the company has slightly postponed its plans for new production capacity and will closely monitor the actual market demand.

Fan also emphasized that the volume of Micro LED will undoubtedly increase, and the significant symbolic revenue is expected around 2027, given the longer evaluation time for Micro LED in automotive applications.

However, the sale of Ennostar’s factory also highlights the delayed mass production of Micro LED. Currently, Micro LED is primarily used in large display products like TVs and small displays for smartwatches.

AUO, a Taiwanese company that specializes in optoelectronic solutions, commenced Micro LED production at the end of last year, supplying to high-end smartwatch clients, expected to achieve cost efficiency.

As for Samsung and LG, they view Micro LED TVs as a core market, aiming to enhance profitability through positioning them as high-end television options. At CES 2024, Samsung showcased a transparent Micro LED screen, reaffirming the potential of Micro LED as the next-generation display technology. However, due to the high unit price, mass adoption in the consumer market is currently limited.

Furthermore, despite being a key industry influencer, Apple has not yet integrated Micro LED into its product roadmap. Notably, the Vision Pro, currently available for pre-orders, opts for Micro OLED instead, signaling that the practical implementation of Micro LED in products may still be some time away.

Although it will take some time for mass production to ramp up, Taiwanese manufacturers are actively laying the groundwork for Micro LED technology. Major Micro LED manufacturers, such as PlayNitride, have signed production line construction contracts with EPISTAR and AUO.

EPISTAR has completed construction by the end of last year, while AUO is expected to have production capacity by the end of next year. Both AUO and Innolux, under the umbrella of the CarUX initiative, showcased Micro LED automotive technology at this year’s CES.

Innolux has also purchased a significant amount of transfer equipment from PlayNitride, further enhancing the completeness of the Taiwanese Micro LED supply chain.

Read more

• [News] Samsung Semiconductor to Take Over Samsung Micro LED Business
• [News] AUO and PlayNitride Sign NT$700 Million Deal for 6-inch Micro LED CoC Line in Taiwan

(Photo credit: AUO)

According to industry sources cited by South Korean media The Chosun Daily, Samsung has commenced the production of prototypes for its second-generation 3nm process and is testing the chip’s performance and reliability. The goal is to achieve a yield rate of over 60% within the next six months.

TSMC and Samsung are both actively vying for customers. Samsung is preparing to commence mass production of the second-generation 3nm GAA architecture in the first half of the year. The key to success in the competition lies in whether Samsung can meet the demands of major clients such as Nvidia, Qualcomm, AMD, and simultaneously achieve a rapid increase in production.

Samsung is currently testing the performance and reliability of prototypes for the second-generation 3nm process, with the initial product set to feature in the soon-to-be-released Galaxy Watch 7 application processor (AP). It is expected to be used in the Galaxy S25 series Exynos 2500 chip next year.

If the production yield and performance of the second-generation 3nm process are stable, there is a chance that customers who had previously switched to TSMC may return to Samsung, especially considering Qualcomm’s movements.

As per report, Qualcomm is collaborating with TSMC in the production of the next-generation Snapdragon 8 Gen 3. Additionally, Nvidia’s H200, B100, and AMD’s MI300X are expected to adopt TSMC’s 3nm process.

Samsung announced in November of last year that it would commence mass production of the second-generation 3nm process in the latter half of 2024. While Samsung has not responded to Chosun’s report regarding the production of prototypes for the second-generation 3nm process, the timeline seems plausible.

However, the report mentions a chip yield rate of 60% without specifying transistor count, chip size, performance, power consumption, or other specifications.

Furthermore, according to Tom’s Hardware’s report, the chip size, performance, and power consumption targets for processors used in smartwatches, mobile phones, and data centers are entirely different. A 60% yield rate for small chips would make commercial use challenging, but for chips with a reticle size of 60% yield rate, it would be reasonably acceptable.

However, caution is advised in interpreting this report due to the uncertainties surrounding Samsung’s second-generation 3nm process production targets at its semiconductor foundries.

Nonetheless, the commencement of the second-generation 3nm process production is a significant development for both Samsung and the semiconductor industry as a whole.

(Image: TSMC)

The global foundry advanced process battle is reigniting, as reported by the Commercial Times. TSMC’s 2-nanometer process at the Baoshan P1 wafer fab in Hsinchu is set to commence equipment installation as early as April, incorporating a new Gate-All-Around (GAA) transistor architecture and aiming for mass production in 2025.

Additionally, expansion plans for Baoshan P2 and the Kaohsiung fab are projected to join in 2025, with evaluations underway for Phase 2 in the Central Taiwan Science Park. The competition with Samsung and Intel in the most advanced process is intensifying.

Semiconductor industry sources note the ongoing progress in global foundry advanced processes, with Samsung entering GAA architecture early at 3 nanometers, though facing yield challenges, while Intel anticipates mass production of its RibbonFET architecture at 20A this year.

In response to fierce competition, TSMC must accelerate its pace. The ‘Gate-All-Around’ (GAA) technology is a critical factor determining whether chip processing power will double within 1.5 to 2 years.

As per the report, Samsung’s attempt to lead in the 3-nanometer chip segment, transitioning from traditional FinFET, has faced stability issues in yield, hampering customer adoption, and giving TSMC confidence in its 3-nanometer progress. This also highlights the increased complexity in transitioning from 2D to 3D chip designs with GAA transistor architecture.

Furthermore, Intel is intensifying its efforts to catch up, planning to launch Intel 20A in the first half of the year and Intel 18A in the second half. However, it is speculated that Intel 20A will be exclusively used for Intel’s own products, maintaining a close collaboration with TSMC.

TSMC, adopting a cautious approach, benefits from a more advantageous cost structure by minimizing changes in production tools within the same process technology and manufacturing flow. For customers, altering designs during advanced process development incurs significant time and economic costs.

Supply chain sources reveal that TSMC finalized various parameters for its 2-nanometer process at the end of last year, confirming specialty gases and equipment. Contracts are gradually being signed, with equipment installation at the Baoshan P1 fab scheduled to commence in April. Equipment industry sources suggest that TSMC’s process advancement is progressing rapidly as expected, speculating that there will be updates on the Baoshan P2 fab later this year.

(Image: TSMC)