Semiconductors


2024-02-01

[News] Intensified Competition in the Semiconductor Industry for 2nm Technology Dominance, Potentially Reshaping the Global Foundry Market

The competition for dominance in 2nm semiconductor technology has intensified at the beginning of 2024, marking a crucial battleground among global foundry companies.

As per a report from IJIWEI, major foundry enterprises such as Samsung Electronics, TSMC, and Intel are set to commence mass production adopting 2nm process starting this year. Consequently, the fierce competition for supremacy in 2nm technology is expected to escalate from 2025 onwards. Currently, the most advanced production technology globally is at the 3nm level.

  • TSMC

TSMC’s 2nm products will be manufactured at the Fab 20 in the Hsinchu Science Park in northern Taiwan and at a plant in Kaohsiung.

The Fab 20 facility is expected to begin receiving related equipment for 2nm production as early as April, with plans to transition to GAA (Gate-All-Around) technology from FinFET for 2nm mass production by 2025.

During TSMC’s earnings call on January 18th, TSMC revealed that its capital expenditure for this year is expected to fall between USD 28 billion and 32 billion, with the majority (70% to 80%) allocated to advanced processes. This figure is similar to that of 2023 (USD 30.4 billion), indicating stable investment to ensure its leading position in 2nm technology.

  • Intel

After announcing its re-entry into the foundry business, Intel is actively advancing its foundry construction efforts. The plan includes the introduction of the Intel 20A (equivalent to 2nm) process in the first half of 2024 and the Intel 18A (1.8nm) process in the second half of the year. It is understood that the Intel 18A process will commence test production as early as the first quarter of this year.

Intel’s 2nm roadmap is more ambitious than originally anticipated, being accelerated by over six months. In response to criticisms of its “overly ambitious” plans, Intel swiftly began procuring advanced Extreme Ultraviolet (EUV) equipment.

  • Samsung Electronics

Samsung Electronics has devised a strategy to gain an advantage in the more advanced process war through its Gate-All-Around (GAA) technology. Currently, it is mass-producing the first-generation 3nm process based on GAA (SF3E) and plans to commence mass production of the second-generation 3nm process this year, significantly enhancing performance and power efficiency.

Regarding the 2nm process, per a report from Nikkei, Samsung plans to start mass production for mobile devices in 2025 (SF2) and gradually expand to high-performance computing (HPC) in 2026 and automotive processes in 2027.

Currently, Samsung Electronics is producing GAA products for the 3nm process at its Hwaseong plant and plans to manufacture products for both the 3nm and 2nm processes at its Pyeongtaek facility in the future.

  • Rapidus

Rapidus, a chip manufacturing company supported by the Japanese government, is expected to trial-adopt 2nm process at its new plant by 2025 and begin mass production from 2027.

If Rapidus’ technology is validated, the global foundry market may expand beyond the Taiwan-Korea duopoly to include Taiwan, Korea, the United States, and Japan.

The technology competition to become a “game-changer” ultimately depends on the competition for customers. It’s rumored that TSMC holds a leading position in the 2nm field, with Apple speculated to be its first customer for the 2nm process. Graphics processing giant NVIDIA is also considered a major customer within TSMC’s client base.

According to TrendForce data as of the third quarter of 2023, TSMC’s revenue share accounted for a dominant 57.9%, with Samsung Electronics trailing at 12.4%, a gap of 45.5 percentage points.

However, Samsung Electronics is not sitting idly by. With continuous technological investment, Samsung’s foundry customer base grew to over 100 in 2022, a 2.4-fold increase from 2017. The company aims to expand this number to around 200 by 2028.

Particularly, Samsung’s early adoption of GAA technology is expected to give it an advantage in achieving early production volumes for advanced processes.

Read more

(Photo credit: TSMC)

Please note that this article cites information from IJIWEI and Nikkei.

2024-01-31

[Insights] Memory Spot Price Update: Limited Transactions, Continues Until After Chinese New Year

TrendForce releases latest trends in memory spot prices. With subdued DRAM supply and demand, transactions are limited. NAND Flash shows low trading volumes as well, expected to persist until after the Chinese New Year. Details below:

DRAM Spot Market:

DRAM spot prices are rising steadily, with larger hikes for chips and smaller increases for modules. Regarding chip spot prices, DDR5 products have shown a sharper price increase compared to DDR4 products. However, the quantities that DRAM suppliers have released into the spot market have been fairly limited since the first quarter is the slow season, so transaction volumes are also modest.

Currently, some Chinese OEMs are winding down their operations in preparation for the Lunar New Year holiday, so the state of spot trading is expected to remain like this until the end of the holiday. The average spot price of the mainstream chips (i.e., DDR4 1Gx8 2666MT/s) rose by 1.00% from US$1.903 last week to US$1.922 this week.

NAND Flash Spot Market:

Suppliers are maintaining an extremely restricted shipment on 3D wafers, which explains the steady increase of prices despite low transactions, though the elevation of prices has fallen below that of recent DRAM spots. Client SSD is also amplifying in partial prices from ongoing demand of replenishment among fabs.

A number of Chinese fabs are going on holiday with Chinese New Year arriving imminently, and the current transaction status is likely to carry on until after the holiday. 512Gb TLC wafer spots have risen by 6.77% this week, arriving at US$3.437.

2024-01-31

[News] Semiconductor Equipment Sales in Japan Reach Nearly JPY 3.3 Trillion in 2023

On January 26th, the Semiconductor Equipment Association of Japan (SEAJ) released statistical data revealing that in December 2023, sales of semiconductor equipment in Japan amounted to JPY 305.799 billion (approximately USD 2.07 billion), marking a 2.4% increase from November 2023.

This represents the second consecutive month of month-on-month growth. However, compared to the same month in 2022, there was a slight decline of 0.3%, marking the seventh consecutive month of contraction. Nonetheless, this decline is significantly smaller compared to the 11% decrease observed in the previous month.

In 2023, the total annual sales of semiconductor equipment in Japan amounted to roughly JPY 3.29 trillion (approximately USD 22.26 billion), reflecting a 6.7% year-on-year decrease. Despite the decline, this figure still represents the second-highest sales record in history, second only to the JPY 3.85 trillion (approximately USD 26.05 billion) recorded in 2022.

SEAJ predicts that aside from the recovery of foundries and logic manufacturers, expenditures from memory manufacturers are expected to significantly rebound in the second half of the fiscal year 2023 (from September 2023 to March 2024). It is anticipated that the compound annual growth rate (CAGR) will continue at 10% until March 2026.

Moreover, driven by the demand for new expenditures related to artificial intelligence (AI), semiconductor equipment sales in Japan are forecasted to surge by 27% in the fiscal year 2024 (starting from April 2024), reaching JPY 4.03 trillion (approximately USD 27 billion).

TrendForce has previously reported that Japan’s resurgence in the semiconductor arena is palpable, with the Ministry of Economy, Trade, and Industry fostering multi-faceted collaborations with the private sector. With a favorable exchange rate policy aiding factory construction and investments, the future looks bright for exports.

Read more

Please note that this article cites information from SEAJ.

2024-01-31

[News] NVIDIA Expands Advanced Packaging Supply Chain with Intel’s Inclusion, Diverting Orders from TSMC

NVIDIA’s AI chip supply faces constraints, with insufficient CoWoS advanced packaging production capacity at TSMC potentially being the main issue. According to Economic Daily News, NVIDIA is also providing advanced packaging services to Intel, with a monthly capacity of about 5,000 units. It is expected to join NVIDIA’s advanced packaging supply chain as early as the second quarter in 2024, grabbing a share of TSMC’s related orders.

Industry sources cited by the Economic Daily News believe that Intel’s participation will help alleviate the tight supply of AI chips.

TSMC declined to comment on the rumors on January 30th. As per industry sources cited by Economic Daily News, Intel’s entry into NVIDIA’s advanced packaging supply chain is expected to lead to a significant increase of nearly ten percent in total production capacity.

As per industry analysis cited in the report, even with Intel joining to provide advanced packaging capacity for NVIDIA, TSMC remains NVIDIA’s primary supplier for advanced packaging. When considering the expanded production capacity of TSMC and other related assembly and testing partners, it is estimated that they will supply approximately 90% of advanced packaging capacity for NVIDIA.

Supply chain sources cited by the report further indicate that TSMC is ramping up its advanced packaging production capacity. Production capacity is estimated to increase to nearly 50,000 units in the first quarter of this year, representing a 25% increase from the estimated nearly 40,000 units in December last year.

While Intel may potentially provide NVIDIA with nearly 5,000 units of advanced packaging capacity, this accounts for about 10% of the total. However, Intel is reportedly not involved in NVIDIA’s AI chip foundry orders.

Intel has advanced packaging capacity in Oregon and New Mexico in the United States and is actively expanding its advanced packaging capabilities in its new facility in Penang. It is noteworthy that Intel previously stated its intention to offer customers the option to only use its advanced packaging solutions, expected to provide customers with greater production flexibility.

Industry sources also indicate that the previous shortage of AI chips stemmed from three main factors: insufficient capacity in advanced packaging, tight supply of high-bandwidth memory (HBM3), and some cloud service providers placing duplicate orders. However, these bottlenecks have gradually been resolved, and the improvement rate is better than expected.

(Photo credit: Intel)

Read more

Please note that this article cites information from Economic Daily News.

2024-01-31

[News] Flash Memory May Enter the Era of 280 Layers, and There’s More to Come

Another breakthrough has emerged in flash memory layer technology! A recent report cited by tom’s Hardware has suggested that at the upcoming International Solid-State Circuits Conference (ISSCC) in February of this year, Samsung Electronics will unveil the next-generation V9 QLC NAND solution, pushing flash memory layer technology to 280 layers.

The Battle of Layers is Far from Over

Reportedly, Samsung’s V9 QLC boasts a storage density of 28.5Gb per square millimeter, achieving a maximum transfer rate of 3.2 Gbps. This surpasses the current leading QLC products (2.4 Gbps) and is poised to meet the requirements of future PCIe 6.0 solutions.

Additionally, the report further highlights that Samsung’s V9 QLC is considered the highest-density flash memory solution to date.

Before Samsung, major storage giants such as Micron and SK Hynix had already surpassed the 200-layer milestone. Micron reached 232 layers with a storage density of 19.5Gb per square millimeter, while SK Hynix achieved 238 layers with a storage density of 14.4Gb per square millimeter.

Still, 280 layers are not the end of the storage giants’ layer count competition; there will be breakthroughs with even higher layer counts in the future.

In August 2023, SK Hynix unveiled the world’s highest-layer 321-layer NAND flash memory samples, claimed to have become the industry’s first company developing NAND flash memory with over 300 layers, with plans for mass production by 2025.

Reportedly, SK Hynix’s 321-layer 1Tb TLC NAND achieves a 59% efficiency improvement compared to the previous generation 238-layer 512Gb. This is due to the ability to stack more units of data storage to higher levels, achieving greater storage capacity on the same chip, thereby increasing the output of chips per wafer unit.

On the other hand, Micron plans to introduce higher-layer products beyond the 232-layer milestone. Samsung, with ambitious plans, aims to stack V-NAND to over 1000 layers by 2030.

Kioxia and Western Digital, after showcasing their 218-layer technology in 2023 following the 162-layer milestone, also intend to develop 3D NAND products with over 300 layers in the future.

Amid Memory Market Rebound, What’s the Trend in NAND Flash Prices?

Amid economic headwinds and subdued demand in the consumer electronics market, the memory industry experienced a prolonged period of adjustment. It wasn’t until the fourth quarter of 2023 that the memory market began to rebound, leading to improved performances for related storage giants.

According to research conducted by TrendForce, a global market research firm, NAND Flash contract prices declined for four consecutive quarters starting from the third quarter of 2022, until they began to rise in the third quarter of 2023.

With a cautious outlook for market demand in 2024, the trend in NAND Flash prices will depend on the capacity utilization rates of suppliers.

TrendForce has projected a hike of 18-23% for NAND Flash contract prices, with a more moderated QoQ price increase of 3-8% for 2Q24. As the third quarter enters the traditional peak season, the quarterly price increase could potentially expand synchronously to 8-13%.

In 4Q24, the general price rally is anticipated to continue if suppliers maintain an effective strategy for controlling output. For NAND Flash products, their contract prices are forecasted to increase by 0-5% QoQ for 4Q24.

(Photo credit: Samsung)

Please note that this article cites information from tom’s Hardware and DRAMeXchange.

  • Page 4
  • 125 page(s)
  • 621 result(s)