Subject


SiC


2026-03-31

[News] Silai Semicon Achieves Scaled Delivery of 12-Inch SiC Laser Lift-Off Production Systems

Recently, Silai Semicon has completed the delivery of its third batch of mass-production laser lift-off (LLO) systems compatible with 12-inch silicon carbide (SiC) substrates. The company’s core R&D team originates from the laser science discipline at Huazhong University of Science and Tech...

2026-03-19

[News] China Achieves 14-Inch SiC Breakthrough, Intensifying Global Large-Wafer Competition

On March 11, Tiancheng Semiconductor announced that it had successfully developed a 14-inch silicon carbide (SiC) single crystal using self-developed equipment, with an effective thickness of 30 mm. The breakthrough marks China’s transition in large-sized SiC materials—from the “12-inch adopti...

2026-03-04

[News] Wafer Capacity Set to Surge: A New Phase for the SiC Industry in 2026

In early February 2026, competitive dynamics in the global silicon carbide (SiC) industry are coming into sharper focus. Disclosures and earnings call transcripts from companies including Wolfspeed, Infineon Technologies, and STMicroelectronics indicate that while a slowdown in the electric vehicle ...

2026-01-21

[News] From Air Conditioners to SiC: China’s Gree Electric Accelerates Third-Gen Chip Push for EVs

Gree Electric, the Zhuhai-based appliance giant, is quietly making waves in the semiconductor sector. According to IT Home and EE Times China, the company has entered the third-generation semiconductor market, with its silicon carbide (SiC) chips, already mass-produced for home appliance application...

2026-01-14

[News] Global Players Vie for 12-Inch SiC Single-Crystal Substrates Amid Semiconductor Materials Innovation

Amid rapid innovation in semiconductor materials technology, 12-inch (300 mm) silicon carbide (SiC) single-crystal substrates have emerged as a key battleground for industry players worldwide. Recently, overseas media reported significant progress by Wolfspeed in the development of 12-inch SiC singl...

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