On March 11, Tiancheng Semiconductor announced that it had successfully developed a 14-inch silicon carbide (SiC) single crystal using self-developed equipment, with an effective thickness of 30 mm. The breakthrough marks China’s transition in large-sized SiC materials—from the “12-inch adopti...

In early February 2026, competitive dynamics in the global silicon carbide (SiC) industry are coming into sharper focus. Disclosures and earnings call transcripts from companies including Wolfspeed, Infineon Technologies, and STMicroelectronics indicate that while a slowdown in the electric vehicle ...

Gree Electric, the Zhuhai-based appliance giant, is quietly making waves in the semiconductor sector. According to IT Home and EE Times China, the company has entered the third-generation semiconductor market, with its silicon carbide (SiC) chips, already mass-produced for home appliance application...

Amid rapid innovation in semiconductor materials technology, 12-inch (300 mm) silicon carbide (SiC) single-crystal substrates have emerged as a key battleground for industry players worldwide. Recently, overseas media reported significant progress by Wolfspeed in the development of 12-inch SiC singl...

On November 19, China’s Shenzhen Kuotan Semiconductor Technology (Huizhou Huishikang Technology) announced plans to invest RMB 1.15 billion to build the world’s largest 12-inch optical-grade silicon carbide (SiC) materials production base in Zhongkai district, Huizhou, Guangdong. The project ...