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TrendForce’s latest DRAM industry survey reveals that Micron intends to acquire PSMC’s Tongluo fab in Taiwan (excluding production equipment) for US$1.8 billion. The deal also includes a long-term partnership for future DRAM packaging services. This collaboration aims to enable Micron to increase its capacity for advanced-node DRAM while boosting PSMC’s supply of mature-node DRAM, potentially improving the global DRAM supply outlook by 2027.
TSMC and Samsung are cutting 8-inch wafer capacity, pushing global 8-inch capacity to a projected 2.4% year-over-year decline in 2026. AI-driven demand for power ICs is becoming the key pillar supporting 8-inch fab utilization throughout the year. Foundries are considering price hikes of 5-20%, though weak end-market visibility and cost pressure from rising memory and advanced-node prices may cap actual increases.
TrendForce’s recent investigations indicate that Nvidia has revised the HBM4 specifications for its Rubin platform in 3Q25, raising the required per-pin speed to above 11 Gbps. This change has necessitated that the three major HBM suppliers modify their designs.
TrendForce’s recent research indicates that as major international NAND Flash producers reduce or halt MLC NAND Flash output and redirect their capital and R&D investments toward advanced process tech, the worldwide MLC NAND Flash capacity is expected to decrease by 41.7% YOY in 2026, leading to increased supply-demand discrepancies.
Conventional DRAM contract prices in 1Q26 are forecast to rise 55–60% QoQ, while NAND Flash prices are expected to increase 33–38% QoQ The DRAM supply-demand gap continues to widen as U.S.-based CSPs lock in capacity, forcing other buyers to accept higher prices; server DRAM prices are projected to surge by more than 60% QoQ NAND Flash demand is increasingly polarized between consumer and AI applications, with enterprise SSDs becoming the largest segment; client SSD prices are forecast to rise by over 40%
