Tesla recently announced that its next-generation EV platform will reflect a 75% reduction in SiC components, though this reduction will be made without compromising vehicle performance and safety. This announcement is one of the very few specific details that Tesla has provided to the public about its plan for the development of its future vehicle models. Therefore, it has also trigger a variety of speculations across the automotive industry. According to TrendForce’s investigation, Tesla does not appear to have much confidence in the stability of the supply chain for SiC components. In the past few years, Tesla has been forced to initiate several recalls for the Model 3. One official reason given for the recalls was that the inverters of some of the Model 3 had power semiconductor components with minor manufacturing differences. As a result, these inverters could malfunction after a period of operation and would not able to perform the regular task of current control. This explanation directly points to a quality issue with the SiC components that Tesla has procured for its vehicles.

Additionally, a production capacity crunch for substrates has been the most significant challenge in the development of the market for SiC components. The major suppliers for SiC components and SiC substrates such as Wolfspeed, Infineon, and STMicroelectronics are currently adding a lot more production capacity. At the same time, Tesla is proceeding with the strategy of diversifying its suppliers for SiC components in order to minimize the risk of disruptions in the supply chain.

SiC components are certainly a key category of automotive electronic components that EV manufacturers like Tesla are going to consider when building their future vehicle models. Therefore, in the context of technological advancements, TrendForce believes that Tesla could adopt a hybrid SiC-Si IGBT package for the inverter of its next-generation EV platform. However, switching to such solution will entail disruptive innovations at the engineering and design levels, so this transition will raise many challenges. Also, regarding SiC MOSFETs that have been a critical part of today’s EVs, TrendForce anticipates that their mainstream structural design will transition from planar to trench. Currently, Infineon, ROHM, and BOSCH are the main suppliers for trench SiC MOSFETs.

On the whole, the hybrid SiC-Si IGBT package and trench SiC MOSFETs are technologies that can substantially reduce the total cost of SiC components for a vehicle. They also reduce the complexity and cost of an entire vehicle platform. These benefits, in turn, can help raise the penetration rate of SiC components in the low-end and midrange segments of the EV market. On the other hand, the widening adoption of SiC components could affect the market share of Si IGBTs.

In the market for automotive SiC components, Tesla has been acting as a major indicator of demand and product development trends. Therefore, the semiconductor industry has been paying close attention to this carmaker’s activities. Since Tesla has so far given very few details about its next-generation EV platform, TrendForce says more observations are needed to determine the reasons behind the reduction in SiC content.

With the continuous deterioration of the global environment and the exhaustion of fossil fuel energy, countries around the world are looking for new energy sources suitable for human survival and development. The construction of photovoltaic energy storage projects is an important measure to implement energy transformation. Third-generation semiconductors have the characteristics of high frequency, high power, high voltage resistance, high temperature resistance, and radiation resistance, which can promote highly efficient, highly reliably, and low cost of photovoltaic energy storage inverters and the green and low-carbon development of energy.

SiC will be widely used in high-power string/central inverters, while GaN is more suitable for household micro-inverters

As the photovoltaic industry enters the era of “large components, large inverters, large-span brackets, and large strings,” the voltage level of photovoltaic power plants has increased from 1000V to over 1500V and high-voltage SiC power components will be used extensively in string and centralized inverters. For residential micro-inverters with a power of up to 5kW, GaN power components have more advantages. Not only can they significantly improve overall conversion efficiency, effectively reduce the levelized cost of energy (LCOE), but also allow users to easily build smaller, lighter, and more reliable inverters.

Key SiC substrates are crucial to the development of third-generation semiconductors and major manufacturers are competing to get to market

SiC substrate is regarded as the core raw material of third-generation semiconductors. Its crystal growth is slow and process technology complex. Mass production is not easy. Conductive substrates can produce SiC power electronic components while semi-insulating substrates can be used for the fabrication of GaN microwave radio frequency components. In addition, due to the high difficulty of substrate preparation, its value is relatively high. The cost of SiC substrate accounts for approximately 50% of the total cost of components which demonstrates its importance in the industrial chain.

At present, the supply of the global SiC market is firmly in the hands of substrate manufacturers. Wolfspeed, II-VI and SiCrystal (subsidiary of ROHM) together account for nearly 90% of shipments. IDM manufacturers such as Infineon, STM, and Onsemi are actively developing upstream SiC substrates and expect to take full advantage of the supply chain to strengthen their competitiveness. Everyone wants to get a piece of the pie, so the battle for SiC substrates will become more and more fierce, but the wait will not be long to see where the industry eventually goes in coming years.

（Image credit: Pixabay ）

Apple recently unveiled its 140W MagSafe charger for the new MacBook Pro, marking the first time that Apple is adopting GaN technology. As such, 100+ watt fast charge products have thus entered a period of growth, in turn accelerating the adoption of third-generation semiconductor devices in consumer applications, according to TrendForce’s latest investigations. While GaN power transistor prices have dropped to nearly US$1 as of now, and GaN fast charge technologies continue to mature, TrendForce expects GaN solutions to reach a 52% penetration rate in the fast charge market in 2025.

TrendForce also indicates that the vast majority of GaN fast chargers’ peak power fell within the 55W-65W range in 2020. GaN fast chargers with 55W-65W of peak power accounted for 72% of all GaN fast charger sales last year, with 65W being the mainstream, whereas GaN fast chargers with 100W and more in peak power accounted for only 8%. Even so, the outlook for these high-power fast chargers appears relatively promising, as more and more companies release their own high-power fast chargers in response to consumers’ increasing energy consumption demand. Fast chargers with a peak power of 140W are the most powerful solution currently available.

Within the 100+ watt product category, GaN fast chargers have reached a penetration rate of 62%. These chargers are primarily supplied by Navitas and Innoscience. With a market share of more than 70%, Navitas’ GaN chips are used in products from Baseus, Lenovo, and Sharge, among others. On the other hand, PFC+LLC combo controllers have become the mainstream solution for 100+ watt fast chargers as these controllers allow for higher efficiency and smaller physical dimensions. The combination of SiC diodes and GaN switches results in increased PFC (power factor correction) frequency. As such, major manufacturers have quickly adopted the GaN+SiC wide bandgap semiconductor combo for their fast chargers.

For instance, Baseus released the world’s first ever 120W GaN (supplied by Navitas) + SiC (supplied by APS) fast charger in 2020 and saw excellent reception from the market. SiC power device suppliers, including Global Power Technology, Maplesemi, and onsemi, have also been ramping up their shipments to PD (power delivery) fast charger manufacturers. It should be pointed out that the fast charge interface has gradually become a standard feature in cars. In light of the rise of the high-power in-car charging market, the power consumption and maximum battery capacity of electronic products will propel the widespread application of third-generation semiconductors, including GaN and SiC, going forward.

For more information on reports and market data from TrendForce’s Department of Semiconductor Research, please click here, or email Ms. Latte Chung from the Sales Department at lattechung@trendforce.com

Demand for fast chargers used for various consumer electronics has been quickly rising. For instance, smartphone brands such as Xiaomi, OPPO, and Vivo led the industry by releasing fast chargers in 2018, subsequently gaining consumer acceptance via their fast chargers’ competitive advantages in cooling efficiency and compact physical dimensions. At the moment, notebook computer manufacturers are also expressing a willingness to adopt fast charging technology. Hence, the GaN power devices segment became the fastest-growing category in the third-generation semiconductor industry. TrendForce expects annual GaN power devices revenue for 2021 to reach US$83 million, an impressive 73% YoY increase.

Regarding the ranking of GaN power devices suppliers, Navitas is projected to obtain a 29% market share (measured by total shipment) and overtake Power Integration for the top position this year. Thanks to Navitas’ proprietary GaNFast power IC design and great relationships with its partners in the semiconductor supply chain, it has become the largest supplier of GaN power IC chips in the consumer electronics markets. The company is currently partnering with leading global smartphone and PC OEMs, including Dell, Lenovo, LG, Xiaomi, and OPPO. Given the rising demand for Navitas’ fast charge ICs from clients this year, the company is expected to transition its chip orders in 2H21 from TSMC’s Fab 2, which is a 6-inch wafer fab, to other 8-inch fabs instead, in order to resolve the issue of insufficient production capacity. At the same time, Navitas is also targeting SAIC (Xiamen Sanan) as a potential supplier of foundry services. With regards to other markets for GaN applications, Navitas will likely target the data center market first by releasing related products in 2022.

Proven power management IC supplier PI (Power Integrations) was the longtime undisputed leader in the GaN power devices market. For this year, PI has released the latest InnoSwitchTM4-CZ series of chips, based on its proprietary PowiGaNTM technology. Featured in products such as Anker’s 65W fast chargers, the InnoSwitch4-CZ chips have received universal acclaim from the fast charge market. In addition, PI’s recently released integrated AC-DC controller and USB PD controller ICs are expected to be major drivers of PI’s revenue growth this year. With an estimated 24% market share, PI will likely take the runner-up spot in the ranking of GaN power devices suppliers for 2021.

China-based Innoscience is expected to possess the third-highest market share in 2021 due to increased support from the Chinese government

It should be pointed out that the market share of China-based Innoscience is projected to rise to 20% this year, the third highest among GaN suppliers. Innoscience’s remarkable performance can primarily be attributed to the massive spike in its shipment of high-voltage and low-voltage GaN products. In particular, Innoscience’s GaN power ICs, used for fast chargers, are now entering the supply chains of tier-one notebook manufacturers for the first time ever. At the same time, while the company’s Suzhou-based 8-inch wafer fab has already kicked off mass production, Innoscience will gradually expand the competitive advantage derived from its IDM business model in the fast-evolving GaN industry. Not only is the company currently actively cultivating its presence in applications including Lidar, OBC (onboard charger) for EVs, and LED power supplies, but it will also look to increase its market share even further next year via its diverse product mix.

Incidentally, the Chinese government has been increasing its support of the domestic third-generation semiconductor industry, while the ongoing China-US trade war has also forced Huawei and other companies in the downstream supply chain to reassess potential supply chain risks. Taken together, these factors have now created the perfect opportunity for China’s third-generation semiconductor material and component suppliers in both qualification/validation and production of domestic substitutes, thereby further propelling the growth of the third-generation semiconductor industry in China. According to TrendForce’s investigations, China invested in about 25 projects aimed at expanding the domestic production capacity of third-generation semiconductors in 2020 (excluding GaN-based optoelectronics materials and devices). These projects totaled more than RMB¥70 billion, a 180% YoY increase.

In particular, commercial products manufactured using SiC substrates, which are the most crucial materials in the third-generation semiconductor industry chain, are primarily based on 4-inch wafers in China, but the country is currently migrating to 6-inch wafers. Although the technological gap between China and its global competitors is fast narrowing, China is still noticeably inferior in terms of monocrystalline quality, resulting in a relatively low self-sufficiency rate of high-performance SiC substrates. TrendForce’s data indicate that, as of 1H21, about seven production lines have been installed in China for GaN-on-Si wafers, while at least four production lines for GaN power devices are currently under construction, also in China. On the other hand, China possesses at least 14 production lines (including those allocated to pilot runs) for 6-inch SiC wafers.

For more information on reports and market data from TrendForce’s Department of Semiconductor Research, please click here, or email Ms. Latte Chung from the Sales Department at lattechung@trendforce.com

In this press release, TrendForce details 10 major trends that are expected to take place across various segments in the tech industry, as follows:

Micro/Mini LED display development will revolve around active matrix solutions

A substantial number of technical bottlenecks in Micro LED development will still persist in 2022. While Micro LED manufacturing costs are expected to remain sky-high due to these bottlenecks, companies have not shown decreased willingness to participate in all segments of the Micro LED supply chain. On the contrary, these companies are actively expanding their respective production lines. Regarding the development of self-emitting Micro LED display products, TVs represent one of the major directions of mainstream Micro LED development, primarily because TVs, compared to IT products, have a relatively low technological barrier of entry. In other words, Micro LED TVs are easier to develop than are other Micro LED display products. For instance, after releasing a 110-inch commercial passive matrix Micro LED display, Samsung will likely continue to develop 88-inch (and under) consumer-grade active matrix Micro LED TVs. This extension of Micro LED technology from the large-sized commercial display segment to the household-use segment by Samsung is in turn indicative of the overall expansion of the Micro LED market.

Regarding display products equipped with Mini LED backlights, brands have been raising the number of Mini LED chips used per panel in an attempt to boost the specs of their display products and pursue 1:1,000,000 high contrast ratios that are comparable to OLED displays. As a result, Mini LED backlight panels’ LED chip consumption is more than 10 times higher compared to traditional LED backlight panels, in addition to the fact that Mini LED backplane manufacturing requires SMT equipment with a higher degree of accuracy and production capacity. While Mini LED backlights are primarily based on passive matrix solutions, they will move towards active matrix solutions going forward, with a corresponding surge in Mini LED chip consumption. Hence, the performance and capacity of SMT equipment will also become one of the key criteria in brands’ selection of potential supply chain partners.

More advanced AMOLED technology and under-display cameras will usher in the next stage of smartphone revolution

As the supply of and production capacity for AMOLED panels continue to rise, AMOLED technology has also become increasingly mature. Leading suppliers are still attempting to tack on additional functions and improved specs to their AMOLED panels in order to not only raise said panels’ added values, but also maintain the competitive advantages of the suppliers themselves. The primary value added to AMOLED panels in 2022 will likely continue to be the ever-improving foldable designs, which will feature optimized weight reduction and power efficiency. Apart from mainstream foldable phones that can unfold to reach tablet-like sizes, clamshell-like designs such as flip-up and flip-down smartphone bodies will also emerge as a form factor that more closely resembles the smartphones currently in use. Furthermore, retail prices of foldable phones are expected to generally fall within the price bands of mainstream flagships, thereby generating sales growths for the upcoming foldable models. Other foldable designs, including form factors with even more folds or rollable form factors, are expected to enter production within the near future. TrendForce expects foldable phones to reach a penetration rate of more than 1% in 2022 and 4% in 2024. LTPO panels, on the other hand, are an effective solution to power consumption issues arising from the adoption of 5G technology and high refresh rate displays. Hence, LTPO panels will likely gradually become the mainstream display panel for flagship smartphones. After two years of development and adjustments, under-display camera modules will finally make their appearance in various brands’ flagship models and enable the creation of smartphones with true full-screen displays.

The foundry industry welcomes the arrival of 3nm process technology courtesy of TSMC’s FinFET and Samsung’s GAA technologies

As semiconductor manufacturing processes gradually approach physical limits, chip development must now turn to either “changes in transistor architecture” or “breakthroughs in back-end packaging technology or materials” in order to achieve faster performances, reduced power consumption, and smaller footprints. After incorporating EUV lithography at the 7nm node in 2018, the semiconductor industry will welcome yet another revolutionary process technology in 2022 – the 3nm node. More specifically, TSMC and Samsung are expected to announce their respective 3nm process technologies in 2H22. While the former will continue to adopt the FinFET architecture that it has been using since the 1Xnm node, Samsung will for the first time utilize its own implementation of GAAFET, called MBCFET (multi-bridge channel field-effect transistor) for its 3nm process technology.

In contrast with the FinFET architecture, in which the gate makes contact with the source/drain channel on three sides, the GAAFET architecture consists of a gate that surrounds the nanowire or nanosheet channel on four sides, thus increasing the surface area of contact. The GAAFET design significantly reduces leakage currents by giving the gate a greater degree of control over the channel. Regarding possible applications, the first batch of products mass produced at the 3nm node in 2H22 is expected to primarily be HPC and smartphone chips since these products place a relatively high demand on performance, power consumption, and chip compactness.

While DDR5 products gradually enter mass production, NAND Flash stacking technology will advance past 200 layers

The three dominant DRAM suppliers (Samsung, SK Hynix, and Micron) will not only gradually kick off mass production of next-gen DDR5 products, but also continue to increase the penetration rate of LPDDR5 in the smartphone market in response to demand for 5G smartphones. With memory speed in excess of 4800Mbps, DDR5 DRAM can massively improve computing performances via their fast speed and low power consumption. As Intel releases its new CPUs that support DDR5 memory, with Alder Lake for the PC segment, followed by Eagle Stream for the server segment, DDR5 is expected to account for about 10-15% of DRAM suppliers’ total bit output by the end of 2022. Regarding process technologies, Samsung and SK hynix will kick off mass production of 1 alpha nm products manufactured with EUV lithography. These products’ market shares will likely increase on a quarterly basis next year.

Turning to NAND Flash products, their stacking technologies have yet to reach a bottleneck. Hence, after 176L products entered mass production in 2021, suppliers will continue to migrate towards 200L and above in 2022, although these upcoming products’ chip densities will remain at 512Gb/1Tb. Regarding storage interfaces, the market share of PCIe Gen4 SSDs will likely skyrocket in the consumer PC segment next year. In the server segment, as Intel Eagle Stream CPUs, which support PCIe Gen 5, enter mass production, the enterprise SSD market will also see the release of products that support this interface. Compared to the previous generation, PCIe Gen 5 features double the data transfer rate at 32GT/s and an expanded storage capacity for mainstream products at 4/8TB in order to meet the HPC demand of servers and data centers. Additionally, the release of PCIe Gen 5 SSDs is expected to quickly raise the average data storage capacity per server unit.

Regarding the server market, flexible pricing schemes and diverse services offered by CSPs have directly propelled the cloud service demand of enterprises in the past two years. From the perspective of the server supply chain, the predominant business model has gradually transformed from traditional server brands to ODM Direct, meaning that traditional server brands will see fundamental, structural changes, such as providing colocation servers or full-service cloud migration support, in their business models. This shift also means that enterprise clients will come to rely on more flexible pricing schemes and diverse risk mitigation measures in response to an uncertain global environment. In particular, while the pandemic accelerated changes in work and everyday life in 2020, hyperscalers are expected to account for nearly 50% of total demand for servers in 2022. In addition, the growth in ODM Direct server shipment is expected to surpass 10% YoY as well.

Mobile network operators will undertake more trial projects for 5G SA network slicing and low-latency applications

Mobile network operators have been actively release 5G SA (standalone) networks as the core network powering various services around the world, in turn accelerating the build-out of base stations in major cities, diversifying their network services (via network slicing and edge computing), and delivering end-to-end networks with a high degree of quality assurance. Moving to 2022, applications that are at the intersection of 5G, massive IoT, and critical IoT will emerge in response to enterprise demand. These applications, including light switches, sensors, and thermostats used in smart factories, involve the combination of network endpoints and data transmission. In particular, critical IoT applications include smart grid automation, telemedicine, traffic safety, and industrial automation, whereas critical IoT use cases within the context of Industry 4.0 include asset tracking, predictive maintenance, FSM (field service management), and logistics optimization.

Now that the pandemic has forced enterprises to engage in digital transformation and brought changes to the general public’s lifestyles, the importance of 5G deployment has become increasingly apparent. Private 5G networks, openRAN, unlicensed spectrums, and mmWave developments have also generated a diverse ecosystem that ranges from traditional mobile network operators to other emerging service providers, including OTT media service providers, CSPs, social media, and online businesses. In the future, mobile network operators will likely actively expand their enterprise 5G applications. For instance, O2’s 5G-ENCODE project explores new business models in industrial 5G networks, while Vodafone is collaborating with the MFM (Midlands Future Mobility) consortium to test networks for autonomous vehicles.

Satellite operators will compete over the low-earth orbit satellite market, with 3GPP now supporting non-terrestrial networks

3GPP recently announced that Release 17 Protocol Coding Freeze will take place in 2022. Release 17 represents the first time 3GPP has incorporated NTN (non-terrestrial network) communications into its releases and therefore marks a significant milestone for both the mobile communications industry and the satellite communications industry. Prior to this, mobile communications and satellite communications had been two separate, independently developing industries. That is why companies working across the two industries in the upstream, midstream, and downstream supply were generally different as well. After 3GPP includes NTN in its upcoming release, the two industries are likely to generate more opportunities for collaboration and co-create brand new innovations. Regarding the deployment of LEO (low earth orbit) satellites, US-based SpaceX has applied to launch the highest number of satellites among all satellite operators. Other major operators include Amazon, UK-based OneWeb, Canada-based Telesat, etc. Region-wise, US operators account for more than 50% of all satellites launched. Not only do LEO satellites have the advantage of signal coverage that is unaffected by geographical features, such as mountainous regions, oceans, and deserts, but they are also able to synergize with the 5G network. The ability of LEO satellites, as part of the NTN, to enhance 5G communications makes them a crucial component in the 3GPP Release 17. TrendForce therefore forecasts an increase in global satellite revenue in 2022.

While smart factories are among the first to leverage digital twins, IoT technologies are expected to become the backbone of the metaverse

The new normal that emerged in the wake of the COVID-19 pandemic continues to propel demand for contactless devices and digital transformations. As part of this evolution, IoT development in 2022 will likely focus on CPS (cyber-physical systems), which combines 5G, edge computing, and AI technologies to extract and analyze valuable information from vast data streams for the purpose of smart automation and prediction. A current example of CPS applications is the digital twin, used for such verticals as smart manufacturing and smart cities; while CPS integration for the former facilitates design, testing, and manufacturing simulations, the latter make use of CPS to monitor significant assets and assist in policymaking. Now that industrial realities have become more complex, and the interplay between usage cases and equipment have increasingly demanded attention, digital twins will subsequently be deployed to a wider range of applications. Paired with 3D sensing, VR, and AR capabilities, IoT-based metaverse will likely emerge as a smart, complete, real-time, and safe mirror to the physical world, and the first application of IoT-based metaverse is expected to be smart factories. Ultimately, technological innovations in data collection (including visual, auditory, and environmental data via sensors), data analysis (via AI platform integration), and data integrity (via blockchains) will also emerge as a result of IoT development.

AR/VR equipment manufacturers aim to deliver fully immersive experiences via integration of additional sensors and AI processing

The COVID-19 pandemic has fundamentally changed the way people live and work. For enterprises, the pandemic not only accelerated their pace of digital transformation, but also increased their willingness to integrate emerging technologies into their existing operations. For instance, AR/VR adoption for applications such as virtual meetings, AR remote support, and virtual design has been on the rise recently. On the other hand, companies will likely focus on various remote interaction functionalities in virtual communities and online games as an important AR/VR market segment. TrendForce therefore believes that the AR/VR market will expand by a considerable margin in 2022 due to the falling retail prices of AR/VR hardware as well as the growing adoption of such hardware for various use cases. Furthermore, the market will also continue to pursue more realistic AR/VR effects, such as applications that feature more realistic images constructed by software tools or the creation of virtual responses from real-world data assisted by either AI processing or the integration of various sensors. For instance, eye-tracking functionalities will become an optional feature of consumer products released by Oculus and Sony. Apart from these examples, AR/VR solutions may even evolve to the point where they are able to provide partial haptic feedback to the user through controllers or other wearable devices in order to deepen user immersion.

A natural extension of autonomous driving technology, automated valet parking is set to resolve drivers’ pain points

As part of autonomous driving technology’s implementation aimed at improving everyday life, AVP (automated valet parking), an SAE level 4 driverless parking service, is expected to become an important optional function of high-end vehicles beginning in 2022. Relevant international standards are currently being drafted and are expected to facilitate the adoption of AVP going forward. However, since AVP systems differ according to vehicle specifications, they are subject to various restrictions related to driving conditions, including fixed/unfixed routes and private/public parking spaces, while parking lot conditions such as wireless network connectivity and the comprehensiveness of traffic markings can also affect the viability of AVP. The distance between people and the vehicle during AVP use, on the other hand, is governed by domestic laws. In view of automakers’ diverse technological roadmaps, AVP parking routes are generated by either local computing on the vehicle end or cloud computing, the latter of which requires sufficient network connectivity in order to function. The former is therefore expected to see usage in a wider variety of use cases. Alternatively, some vehicles may be equipped with both computing solutions. With other such factors as V2X and high-definition maps affecting the range of AVP applications, TrendForce expects an increasing number of different AVP solutions to be under development at the moment.

The third-generation semiconductor industry will move towards 8-inch wafers and new packaging technologies while expanding in production capacity

The gradual phasing out of ICE vehicles by various governments across the 2025-2050 period is set to both accelerate the pace of EV sales and increase the penetration rate of SiC and GaN devices/modules. Energy transition activities worldwide as well as the rapid growth of telecom applications such as 5G technology have also led to a persistent bull market for third-generation semiconductors, resulting in strong sales of SiC and Si substrates. However, as current efforts in substrate production and development are relatively limited, suppliers are able to ensure a steady yield of SiC and GaN substrates only by manufacturing them with 6-inch wafers. Such a limitation has, in turn, led to a long-term shortage in foundries’ and IDMs’ production capacities.

In response to this quandary, substrate suppliers, including Cree, II-VI, and Qromis, are now planning to not only expand their production capacities in 2022, but also migrate their SiC and GaN production to 8-inch wafers, in hopes that these plans will gradually alleviate the prevailing shortage in the third-generation semiconductor market. On the other hand, foundries such as TSMC and VIS are attempting to shift to 8-inch wafer fabrication for GaN on Si technology, while major IDM Infineon is releasing products based on the latest CoolSiC MOSFET, delivering trench designs that enable significant power efficiency for semiconductor devices. Finally, telecommunication component provider Qorvo has also released a new GaN MMIC copper flip chip packaging architecture for military applications.