According to The Elec, KAIST Professor Kim Jeong-ho noted that HBF (High Bandwidth Flash)—NAND flash stacked like HBM—could become a decisive factor for the future of AI. As the report explains, HBF resembles HBM in structure, with dies stacked and linked by through-silicon vias (TSVs). The key ...

According to ZDNet, South Korea may lead in memory products like DRAM and NAND flash, but it remains heavily dependent on Japan for critical materials. The report, citing sources, warns that unless localization advances more quickly, this reliance could become a structural risk for the country in th...

As the battle for next-gen HBM intensifies, memory giants are gearing up for a surge in demand from NVIDIA’s Rubin. According to ZDNet, NVIDIA plans to complete HBM4 final qualification tests in Q1 2026. However, EE Times notes that with the U.S. chipmaker racing ahead on GPU development, standard...

While local media spotlight Huawei's push to cut China's HBM dependency for AI inference, the tech giant made waves on August 12th with the launch of UCM (Unified Computing Memory)—an AI inference breakthrough that slashes latency and costs while turbocharing efficiency, according to mydrivers and...

According to TechNews, Taiwan’s leading DRAM maker Nanya Technology and IC design firm Etron Technology jointly announced the establishment of a new joint venture focused on AI memory design services. Nanya and Etron will invest NTD 500 million in the venture, with an 80:20 ownership split. The co...