Samsung may be pivoting its GaN power semiconductor strategy. According to The Elec, the company is expected to prioritize foundry services amid comparatively stronger demand, rather than device sales, where it has reportedly struggled to attract customers. Sources say Samsung Electronics failed ...

In the first quarter of 2026, China’s wide bandgap semiconductor industry—spanning silicon carbide (SiC) and gallium nitride (GaN)—saw a stark divergence in performance. Driven by robust demand from 5G base station deployment and on-board chargers (OBCs) in electric vehicles, GaN RF-focused co...

In terms of the patent dispute with German chipmaker Infineon, Innoscience, in a May 8 press release, announced that the U.S. International Trade Commission (“ITC”) issued a Final Determination in Investigation No. 337‑TA‑1414 confirming that Innoscience’s current gallium nitride (“GaN�...

Recently, CT-Unite released its CT-21X gallium nitride (GaN) magnetic encoder chip, marking the debut of China’s first GaN-based encoder specifically designed for humanoid robot joints. The launch represents a key breakthrough in the country’s development of high-end, application-specific chips ...

Recently, China-based Ziener Tech has unveiled progress in sapphire substrate thinning, announcing that it has successfully reduced the substrate thickness of its 8-inch GaN-on-sapphire wafers to 50μm. In practical applications, heat dissipation has long been a key bottleneck limiting GaN device...