On June 8, 2026, the Massachusetts Institute of Technology (MIT) announced that its researchers had successfully embedded gallium nitride (GaN) transistors into an ultra-thin single-crystal diamond layer, overcoming a major thermal bottleneck in high-power wireless chips and developing a record-sett...

As per Science and Technology Daily, the first gallium nitride-on-silicon (GaN-on-Si) radio frequency (RF) chip for smart terminals to enter mass production has surpassed 5 million units shipped. Developed independently by the 55th Research Institute of China Electronics Technology Group Corporat...

Innoscience announced that China’s Supreme People’s Court has upheld a sales injunction against certain gallium nitride (GaN) products manufactured by Infineon Technologies AG, bringing a patent infringement dispute between the two companies to a final conclusion in China, according to its compa...

Recently, West Lake Yanshan Technology (Hangzhou) Co., Ltd. officially commenced production at what it claims is the world’s first 8-inch GaN-on-Silicon Micro LED IDM mass production line, located at its factory in Deqing, Zhejiang Province. The newly launched line adopts a full-chain IDM model...

AI reasoning, agentic workflows, and accelerated computing are transforming data centers into next-generation AI factories. As AI workloads scale from single servers to rack-scale systems and full data-center deployments, power delivery has become a critical enabler of system performance, efficiency...