In recent years, data center has been one of the key areas for GaN (Gallium Nitride) manufacturers to tap power electronics market, and GaN applications in the data center power supply market have taken a big step forward. Notably, the rise of AI technology has further fueled this market at present.

In the AI ecosystem, data centers have enormous demands for high-speed computing and power. According to a TrendForce report, NVIDIA’s Blackwell platform will be officially launched in 2025, replacing the existing Hopper platform, and will become NVIDIA’s primary solution for high-end GPU, accounting for nearly 83% of all high-end products.

For high-performance AI servers like the B200 and GB200, a single GPU can consume more than 1,000W of power.

Facing soaring power demands, the power specifications for each data center rack will increase from 30-40kW to 100kW, posing significant challenges for data center power systems. The combination of GaN and liquid cooling technologies will be critical to improving energy efficiency in AI data centers.

The hike in chip power consumption requires servers to achieve higher power density and efficiency.

GaN, which reduces energy losses and increases power density, is now seen as one of the key technologies for optimizing energy efficiency in AI data centers, which has attracted many players, including Infineon, Texas Instruments (TI), Navitas, Innoscience, Transphorm, CorEnergy, Danxi Tech, and GaNext, to join the race.

Among them, both Navitas and Infineon have unveiled their AI data center power roadmaps.

Infineon’s AI Data Center Power Roadmap (Source: Infineon)

Combining the unique advantages of Si (Silicon), SiC (Silicon Carbide), and GaN (Gallium Nitride), Infineon has launched a 3 kW PSU and a 3.3 kW PSU, with an 8 kW PSU expected to be available in the first quarter of 2025.

The new 8 kW PSU will support AI racks with outputs of up to 300 kW or more. Compared to the 32 W/in³ density of the 3 kW PSU, its efficiency and power density will increase to 100 W/in³, further reducing system size and lowering operator costs.

In terms of GaN technology, Infineon’s CoolGaN™ solution can provide over 99% system efficiency in PFC topologies. Moreover, GaN Systems, acquired by Infineon, already released a 3.2kW AI server power supply as early as 2022 and unveiled its fourth-generation GaN platform in 2023.

The new platform achieves efficiency exceeding the Titanium level, with power density increased from 100W/in³ to 120W/in³. Thereby, the industry highly expects the synergistic effect created by the combination of these two companies.

Navitas introduced its GaNSafe™ and Gen-3 Fast SiC technology last year, along with a 4.5kW CRPS design, achieving more than double the power density of traditional silicon solutions. In July this year, Navitas unveiled its CRPS185 4.5kW AI data center server power solution, with a power density of 137W/in³ and over 97% efficiency.

Navitas AI Data Center Power Roadmap (Source: Navitas)

Navitas revealed that over 60 customer projects involving 3.2kW and 4.5kW power solutions for data centers are currently under development.

These projects are expected to bring millions of dollars in revenue growth for Navitas’ GaN and SiC business between 2024 and 2025. It aims to begin small-scale production of AI data center power solutions in 2024.

Aside from Infineon and Navitas, other manufacturers like TI, EPC, CorEnergy, GaNext, and Innoscience also set sights on this market.

TI reached an agreement with Delta, the world’s largest server power supply provider (with nearly 50% market share), as early as 2021. Based on GaN technology and TI’s C2000™ MCU real-time control solution, they are developing high-efficiency, high-power server PSU for data centers.

Thus, their joint efforts and future fruit in the AI server power market are highly anticipated.

Beyond AI data center server, humanoid robot industry that enjoys burgeoning growth this year, also injects new vitality into the GaN market.

Humanoid robot is assembled by sensing, control, motor, and battery systems, in which GaN can has its place in LiDAR system, motor drive, DC-DC converter, and battery BMS, among which motor drive plays a critical role.

According to TrendForce, the demand for motor driver in humanoid robot has skyrocketed due to the mounting demands for degrees of freedom.

To achieve higher power output, high-power-density, high-efficiency, and fast-response motor driver are in demand, and GaN is a perfect fit for it, which also has the ability to strengthen overall robot performance in terms of heat management, compact design, and overall system design.

It is reported that Siemens, Yaskawa Electric, and Elmo have already integrated GaN technology into their robotic motors, and the GaN industry chain is gearing up for seizing more opportunities.

Currently, companies such as TI, EPC, Transphorm, Innoscience, Navitas, and CorEnergy are actively promoting GaN adoption in motor drive market. Among them, Transphorm has supplied GaN FET products for Yaskawa Electric’s new servo motor.

TrendForce points out that future robots will exceed our imagination, with precise, fast, and powerful movement capabilities as the key parts, which will inevitably push the motors required to drive these movements advance forward, and this is regarded as a boon for GaN technology.

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• [News] Global GaN Power Device Market Size Expected to Reach USD 4.376 Billion in 2030, CAGR of 49%
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(Photo credit: Infineon)

According to TrendForce’s “2024 Global GaN Power Device Market Analysis Report”, the development of the GaN power device industry is expected to accelerate once again as Infineon and Texas Instruments allocate more resources into GaN technology.

In 2023, the market size of global GaN power device was around USD 271 million, and it is projected to grow to USD 4.376 billion by 2030 at a compound annual growth rate (CAGR) of 49%.

Notably, the proportion of non-consumer applications is expected to increase from 23% in 2023 to 48% by 2030, with automobile, data center, and motor drive being the core application scenarios.

• GaN Expected to Make Great Difference in Reducing Heat and Improving Efficiency in AI Era

The evolution of AI technology has driven the continuous increase in computing power demand, making the power consumption of CPU and GPU an increasingly striking issue. To meet the requirements of more advanced AI computations, server power supply is required to further enhance efficiency and power density, and thus, GaN has emerged as a key solution.

Delta, the world’s largest server power supply provider, holds nearly 50% of the market share. Observing the advancement of its server power supplies, the power density has increased from 33.7W/in³ to 100.3W/in³ over the past decade, while power levels has reached 3.2kW and even 5.5kW, and the next generation is expected to exceed 8kW.

TrendForce’s research indicates that AI server is expected to account for 12.2% of overall server shipment in 2024, an increase of ~3.4% from 2023, while the annual growth rate for general server shipment is only 1.9%.

In face of such an attractive opportunity, both Infineon and Navitas Semiconductor have announced technical roadmaps for AI data center this year.

Infineon highlights the significant advantages of combining liquid cooling technology with GaN at lower junction temperature, which will enable data center to maximize efficiency, meet the growing power demands, and overcome the challenges posed by server heat increase.

• Potential of GaN’s High-Frequency Characteristics can be Fully Tapped in Motor Drive Applications

In motor drive applications like robotics, the potential of GaN is gradually emerging. Compared to industrial robots, humanoid robots have a significantly higher degree of freedom (DoF), greatly increasing the demand for motor drivers.

It’s learned that the joint modules of humanoid robots bear the main tasks of exertion and braking. To achieve higher explosive power, motor drivers with high power density, high efficiency, and high responsiveness are needed. As a result, GaN has attracted market attention, especially in load-bearing areas like the legs.

Texas Instruments and EPC (Efficient Power Conversion) have been dedicated to driving GaN’s application in the motor drive field, drawing new players into the market.

Robotics is expected to embrace a future beyond imagination, where precise, fast, and powerful motion capabilities are crucial, and the motors driving these movements will inevitably advance forward, which will be a boon for GaN.

• GaN Provides New Solutions for Automotive Power Electronics

While SiC thrives in the automotive industry, GaN is also gaining traction in this field, with on-board chargers (OBC) considered the best entry point.

The first automotive-grade GaN power product meeting AEC-Q101 standard was released by Transphorm (now Renesas) in 2017, and several manufacturers have since introduced a wide range of automotive-grade products so far.

Overall, although GaN still faces several technical challenges in entering inverter and OBC power system, it is believed that with continuous investment from major automotive chip companies like Infineon and Renesas, GaN will soon become a key component in automotive power systems.

• Consumer Electronics Remain the Main Applications for GaN

Consumer Electronics still holds the biggest proportion among GaN power device applications, in which GaN’s footprint is quickly expanding from fast chargers to home appliances and smartphones.

Specifically, GaN has been widely adopted in low-power smartphone fast chargers, and next will enter into more demanding applications like notebook and home appliance power supplies. Other potential consumer applications include Class-D audio, smartphone over-voltage protection (OVP), etc.

TrendForce believes that GaN power device industry is at a critical breakthrough moment, with several potential applications simultaneously boosting rapid growth.

Moreover, new structures and processes are expected to be introduced in built on better reliability to get into more complex high-power, high-frequency scenarios, injecting new momentum into the industry.

In terms of industry development and market landscape, Fabless companies have been particularly active in the past.

However, as the industry continues to consolidate and the application markets gradually open up, traditional IDM (integrated device manufacturer) giants are expected to gain significant influence, bringing new major changes to the future landscape of the industry.

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(Photo credit: Infineon)

On July 31, IQE plc, the global supplier of compound semiconductor wafer products and advanced material solutions, announced the planned initial public offering (IPO) of the Group’s Taiwanese operating subsidiary (IQE Taiwan) on the Taiwan Stock Exchange (TWSE).

The Group intends to list IQE Taiwan on the TWSE and to sell a minority shareholding through a public offering, but it plans to retain control of IQE Taiwan and will continue to leverage its strategic value, with the proceeds of the public offering intended to be utilized across the Group to fund the growth strategy.

Currently, the IPO process is at an early stage, and IQE has engaged Taishin Securities Co. Ltd as its financial advisor to assist in preparing IQE Taiwan for the IPO. IQE explained that the IPO will be proceeded in two stages.

For the initial phase, IQE Taiwan is expected to be listed on the Emerging Market Board in 1H25, subject to usual regulatory procedures and requirements. Further transaction details and information regarding the process will be disclosed as appropriate.

As IQE is capitalizing on the market opportunities ahead, including in GaN Power, the company considers the listing of its Taiwan subsidiary as an exciting opportunity for the entire group, which will accelerate IQE’s investment in its strategy for growth.

Once the subsidiary is successfully listed, IQE is expected to maximize asset value and ensure supply reliability and flexibility for its global customers.

It’s worth noting that aside from IQE, GaN IDM Innoscience is promoting its IPO process on the Hong Kong Stock Exchange while TASC has spun off its subsidiary responsible for 8-inch GaN business and promoted its listing on TWSE, which all reflect the fact that GaN power semiconductor technologies are gaining traction, particularly with the development of AI server and low-altitude economy sectors.

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• [News] Hong Kong Kicked-off Construction of the First GaN Epi-Wafer Pilot Line
• [News] SK keyfoundry Advances in GaN Power Semiconductors, Reportedly Producing for Tesla Soon

(Photo credit: IQE)

To jointly promote the development of Hong Kong’s microelectronics industry, Hong Kong Science and Technology Parks Corporation and MassPhoton (Hong Kong) held a launch ceremony for Hong Kong’s first ultra-high vacuum “Third-Generation Semiconductor Gallium Nitride Epitaxial Wafer Pilot Line” on July 30.

Reportedly, MassPhoton will move into the newly established Microelectronics Center (MEC) to build Hong Kong’s first 8-inch gallium nitride (GaN) epi-wafer pilot line.

According to reports from media like China News Service, MassPhoton plans to invest at least HKD 200 million in Hong Kong to establish the region’s first global R&D center for third-generation semiconductor GaN epitaxial processes in the Hong Kong Science Park. The center will develop an advanced 8-inch GaN epi-wafer process and equipment platform for the production of GaN optoelectronic and power devices.

In addition, MassPhoton will set up Hong Kong’s first ultra-high vacuum production GaN epi-wafer pilot line in the Innovation Park for small-scale production.

The pilot line is expected to be completed, followed by the construction of a GaN epi-wafer mass production line in Hong Kong, creating over 250 microelectronics-related jobs, including epi-wafer and equipment design, production process development, and more, thereby generating substantial economic value.

Currently, the global semiconductor industry is developing rapidly, simultaneously boosting the GaN market size. According to a previous TrendForce’s report, the global GaN power device market is expected to grow from USD 180 million in 2022 to USD 1.33 billion in 2026, with a compound annual growth rate (CAGR) of up to 65%.

Against this backdrop, Hong Kong has prioritized the development of third-generation semiconductor as a key technology field in recent years. For instance, in May 2024, the Finance Committee of the Hong Kong Legislative Council approved a significant investment of HKD 2.83 billion to establish the “Hong Kong Microelectronics R&D Center,” focusing on third-generation semiconductor technologies.

This plan includes setting up a pilot production line equipped with a broad range of critical tools such as I-line lithography equipment, photoresist development tools, high-temperature ion implanters, high-temperature annealing furnaces, and thin-film tools.

Sun Dong, Secretary for Innovation, Technology and Industry of the Hong Kong Special Administrative Region Government, introduced that the government is actively promoting the development of microelectronics industry, and the Hong Kong Microelectronics R&D Institute will be established within the year, accompanying the construction of a SiC pilot line and a GaN pilot line.

The goal is to assist startups and SMEs in trial production, testing, and certification, fostering collaboration across industry, academia, and research in core technologies of third-generation semiconductor industry.

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• [News] Foundry Giant GlobalFoundries Acquired GaN-Related IP
• [News] Over 350 China’s Semiconductor Industry Projects Thriving in 2023

(Photo credit: Hong Kong Science and Technology Parks Corporation)

On July 1, GlobalFoundries (GF), a major foundry player, announced that it has acquired Tagore Technology’s production-verified proprietary GaN (Gallium nitride) power IP portfolio, which refers to a high-power density solution designed to enable higher efficiency and better performance of automobile, IoT, and AI data center applications where power supply is widely used.

Founded in January 2011, Tagore Technology focuses on developing GaN-on-Si (Gallium nitride on silicon) semiconductor technology for RF and power management applications.

As part of the acquisition, a team of veteran engineers from Tagore, dedicated to developing GaN technology, will join GF. “With this acquisition, GF takes another step toward accelerating the availability of GaN and empowering our customers to build the next generation of power management solutions that will reshape the future of mobility, connectivity and intelligence,” said Niels Anderskouv, chief business officer at GF.

It is worth mentioning that in February 2024, GF received a direct subsidy of USD 1.5 billion under the US CHIPS and Science Act, with part of the funds allocated to the mass production of critical technologies, including GaN.

By combining this manufacturing capability with the technical expertise of the Tagore team, GF is well positioned to transform the efficiency of AI systems and enable lower power consumption particularly pivotal for edge or IoT devices.

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• [News] SK keyfoundry Advances in GaN Power Semiconductors, Reportedly Producing for Tesla Soon
• [News] Infineon in GaN and SiC Expansion Drive Advancements in the New Energy Market

(Photo credit: GF)