[News] Laser Annealing Adoption May Broaden with Wolfspeed, Samsung SiC Push and 400-Layer NAND Expansion

Laser annealing adoption appears to be broadening. According to ETNews, the thermal treatment process is expanding beyond its traditional use in silicon (Si) wafers to silicon carbide (SiC), a material widely regarded as a leading candidate for next-generation power semiconductors. The report adds that the industry’s transition to 8-inch and larger SiC wafers is expected to drive wider use of annealing equipment.

Citing industry sources, the report notes that Wolfspeed, the leading supplier in the SiC wafer market, is moving forward with plans to introduce laser annealing equipment. The company is reportedly discussing purchase orders with a South Korean equipment supplier and is expected to expand deployment following an initial low-volume rollout.

Samsung Electronics is also said to be evaluating laser annealing as it prepares for mass production in its SiC foundry business, targeted for 2028, according to the report.

As the report points out, annealing is used after ion implantation to repair crystal lattice damage and activate dopants, improving the electrical characteristics of semiconductor wafers. Laser annealing further enhances the process by providing precise, localized thermal treatment while minimizing heat-related damage.

400-Layer NAND May Expand Annealing Adoption

The use of laser annealing may expand further. As the report notes, the process is expected to see broader adoption in next-generation memory, with NAND flash exceeding 400 layers emerging as a key use case. To improve NAND performance and storage capacity, manufacturers continue to increase layer counts. This requires etching channel holes through vertically stacked memory cells to enable signal transmission. As these structures become deeper with higher layer counts, maintaining electrical performance and structural stability becomes increasingly challenging.

Annealing is gaining attention as a potential solution because it enables crystallization within the channel-hole region. According to the report, some NAND manufacturers are exploring the technology to achieve the localized crystallization required for next-generation NAND devices with more than 400 layers.

Hybrid Bonding May Expand Laser Annealing’s Role in HBM

Meanwhile, according to a March report by Korea Credit News, SK hynix signed a KRW 15.87 billion (US$11.6 million) advanced process equipment supply contract running through October 7, 2026 with South Korean supplier DIT. The key equipment supplied by DIT is reportedly laser annealing systems.

The deal reflects growing interest in laser annealing as memory technologies become more complex. As Korea Credit News notes, process precision is becoming increasingly critical for HBM and other devices with higher stack counts, driving demand for laser annealing equipment. The report adds that hybrid bonding is expected to increase demand for laser annealing systems, as the technology can help remove internal voids formed during copper interconnections while supporting more advanced stacking architectures.

In addition, ETNews reports that chipmakers continue to explore localized annealing for advanced logic manufacturing at 2nm and below. As adoption expands across memory, power, and logic semiconductor applications, demand for laser-based solutions is expected to grow accordingly.

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(Photo credit: Wolfspeed)