Laser annealing adoption appears to be broadening. According to ETNews, the thermal treatment process is expanding beyond its traditional use in silicon (Si) wafers to silicon carbide (SiC), a material widely regarded as a leading candidate for next-generation power semiconductors. The report adds t...

Amid rapid innovation in semiconductor materials technology, 12-inch (300 mm) silicon carbide (SiC) single-crystal substrates have emerged as a key battleground for industry players worldwide. Recently, overseas media reported significant progress by Wolfspeed in the development of 12-inch SiC singl...

Toshiba recently said that the memorandum of understanding (MOU) signed by its subsidiary, Toshiba Electronic Devices & Storage Corporation, with China’s SICC in August 2025, covering collaboration on silicon carbide (SiC) power semiconductor wafers, was terminated in September 2025 after furt...

Wolfspeed has announced a major executive appointment: former Infineon executive Matthias Buchner has joined the company as Senior Vice President of Global Sales and Chief Marketing Officer (CMO), which will take effect on December 1, 2025. The move underscores Wolfspeed’s determination to acce...

Despite intensifying competition from Chinese rivals, global chipmakers continue to accelerate their SiC investments amid the AI boom. According to Wealth Magazine, NVIDIA is reportedly planning to replace traditional silicon interposers with silicon carbide in its next-generation Rubin architecture...