On November 19, China’s Shenzhen Kuotan Semiconductor Technology (Huizhou Huishikang Technology) announced plans to invest RMB 1.15 billion to build the world’s largest 12-inch optical-grade silicon carbide (SiC) materials production base in Zhongkai district, Huizhou, Guangdong. The project ...

As of November 2025, the silicon carbide (SiC) market is undergoing a critical phase of value re-evaluation and structural divergence. On the pricing front, low-end bulk SiC materials are experiencing price increase due to runaway costs, while mainstream 6-inch SiC substrates continue to plunge amid...

On November 4, Yang Junhong, general manager of Shaanxi Institute for Optoelectronic Pioneer Technology Co., Ltd. (“Optoelectronic Pioneer Institute”), announced that the “8-Inch Advanced Silicon Photonics Integration Technology Innovation Platform” (“8-inch Silicon Photonics Platform”) ...

Mitsubishi Electric: 8-Inch SiC Wafer Fab Completed, Production Accelerating Mitsubishi Electric has announced the completion of its new 8-inch silicon carbide (SiC) power semiconductor manufacturing facility in Kikuchi, Kumamoto Prefecture, Japan. The company held an official completion ceremony...

Toshiba recently said that the memorandum of understanding (MOU) signed by its subsidiary, Toshiba Electronic Devices & Storage Corporation, with China’s SICC in August 2025, covering collaboration on silicon carbide (SiC) power semiconductor wafers, was terminated in September 2025 after furt...