Subject


Samsung


2025-09-16

[News] Samsung Reportedly Delays V9 QLC NAND to 1H26 as SK hynix Hits 321 Layers in August

As major CSPs ramp up AI infrastructure and shift toward high-performance inference, demand for high-capacity storage keeps climbing—putting next-gen NAND development in the spotlight. Yet, according to ZDNet, Samsung Electronics is struggling to commercialize its ninth-generation (V9) high-capaci...

2025-09-16

[News] Silicon Carbide Battle Rekindled by Industry Giants: Wolfspeed, Samsung Make Waves

Despite intensifying competition from Chinese rivals, global chipmakers continue to accelerate their SiC investments amid the AI boom. According to Wealth Magazine, NVIDIA is reportedly planning to replace traditional silicon interposers with silicon carbide in its next-generation Rubin architecture...

2025-09-16

[News] Samsung Reportedly Set to Start Exynos 2600 Mass Production by September’s End

According to South Korean outlet FnNews, sources say Samsung has completed development of its next-generation smartphone application processor (AP), the Exynos 2600, with mass production expected to begin by the end of September. The report highlights that Samsung is showing strong confidence in the...

2025-09-15

[News] NVIDIA Rumored to Ditch SOCAMM1 for Next-Gen SOCAMM2, Opening Door for Samsung, SK hynix

While Micron reportedly passed NVIDIA’s verification and became the first of the big three memory makers to ship SOCAMM (Small Outline Compression Attached Memory Module), the U.S. AI chip giant may revise its adoption plan for this new low-power DRAM (LPDDR) server memory module—a move that cou...

2025-09-12

[News] Samsung Reportedly Expands 1c DRAM Capacity for HBM4, Targeting 60K Wafers Monthly in 2025

According to ZDNet, Samsung Electronics is ramping up efforts to secure production capacity for 1c DRAM as it aims to take an early lead in HBM4. Industry sources say the company plans to complete equipment investments for 1c DRAM at its Pyeongtaek Campus 4 (P4) by the first half of next year. Sa...

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