Subject


DRAM


2025-09-15

[News] What Comes After HBM? NAND-Stacked HBF May Power AI’s Future

According to The Elec, KAIST Professor Kim Jeong-ho noted that HBF (High Bandwidth Flash)—NAND flash stacked like HBM—could become a decisive factor for the future of AI. As the report explains, HBF resembles HBM in structure, with dies stacked and linked by through-silicon vias (TSVs). The key ...

2025-09-10

[Insights] Memory Spot Price Update: SanDisk’s 10% Price Hike Meets Demand-Side Resistance

According to TrendForce's latest memory spot price trend report, regarding DRAM, suppliers continue to raise DDR4 quotes, encouraged by Nanya’s strong August revenue, but buyers show limited acceptance of the hikes. In NAND, SanDisk’s push for a 10% increase to lift market sentiment has met resi...

2025-09-03

[Insights] Memory Spot Price Update: DDR4 Prices Outpace DDR5 as Memory Giants’ EOL Impact Lingers

According to TrendForce's latest memory spot price trend report, regarding DRAM, although spot transaction volumes keep shrinking, DDR4 prices have risen more than DDR5, showing that the impact of the DDR4 EOL announcements by the three major suppliers hasn’t fully faded. In terms of NAND, supplie...

2025-09-01

[News] UltraRAM Reportedly Nears Commercialization: DRAM Speed, NAND Durability, 1K-Year Data Life

According to TechNews, citing Tom’s Hardware and Blocks & Files, the new memory technology “UltraRAM,” which combines the advantages of DRAM and NAND, has made significant progress toward commercialization. UK-based semiconductor startup Quinas Technology, the developer of UltraRAM, has p...

2025-08-21

[News] Chinese Research Team Achieves New Breakthrough in Semiconductor, Based on DRAM Principle

Currently, in fields such as autonomous driving, smart home systems, and industrial control, there is an increasing demand for edge-intelligent hardware to locally process real-time environmental data generated by sensors and smart devices, thereby minimizing decision latency. Neuromorphic hardware ...

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