On May 7, NEO Semiconductor announced a major breakthrough in its 3D X-DRAM technology series: the industry’s first 3D X-DRAM cell structures based on 1T1C and 3T0C architectures. According to NEO Semiconductor, the new technology is designed to deliver unprecedented density, power efficiency, ...

As memory giants accelerate development in HBM4 and high-layer NAND, hybrid bonding technology is drawing heightened attention. South Korean leaders Samsung Electronics and SK hynix remain behind in key patents, according to a report from ZDNet. The report highlights that Samsung and SK hynix have d...

Fudan University has achieved a key breakthrough in the field of integrated circuits. The research team led by Zhou Peng and Liu Chunsen has, by constructing a quasi-2D Poisson model, theoretically predicted a phenomenon called "super-injection," breaking through the existing theoretical limits of m...

Recently, Micron Technology announced that it is sampling the industry's first mobile UFS 4.1 and UFS 3.1 products based on its G9 NAND technology, aimed at enhancing the user experience on flagship smartphones. The Micron G9-NAND-based UFS 4.1 delivers faster speed and lower latency. Compared to...

According to TrendForce's latest memory spot price trend report, regarding DRAM, the three major DRAM suppliers have announced the impending end of production for DDR3 and DDR4 DRAM. This has triggered a rapid response in the spot market, with buyers busily stocking up on related memory products in ...