According to TrendForce's latest memory spot price trend report, regarding DRAM, rumors about a delay in Samsung’s DDR4 EOL plan have been circulating. While TrendForce finds these claims inaccurate, they have nonetheless dampened the upward price momentum. Meanwhile, NAND flash demand remains cau...

U.S. NAND leader Sandisk, fresh off launching a Technical Advisory Board to guide its groundbreaking High Bandwidth Flash (HBF) technology in July, has now signed a landmark MoU with South Korean memory giant SK hynix. The partnership aims to jointly define the HBF specifications—poised to revolut...

According to TrendForce's latest memory spot price trend report, regarding DRAM, the spot market has remained fairly subdued in terms of trading activities, while the average spot price of the mainstream chips (i.e., DDR4 1Gx8 3200MT/s) slightly decreased by -2.40%. As for NAND flash, legacy product...

Micron has launched three breakthrough data center SSDs built on its G9 NAND platform, cementing its storage leadership. The new lineup, according to its press release, delivers the world's first PCIe Gen6 NVMe SSD, industry-leading E3.S capacity, and the lowest-latency mainstream Gen5 SSD designed ...

As HBM competition heats up, the world’s top three memory giants—SK hynix, Samsung, and Micron—will share the stage in Taiwan for the first time this September at the Memory Executive Summit during SEMICON Taiwan 2025, according to Commercial Times and Knews. As per SEMICON Taiwan, the su...