Recently, several 6-inch production lines have made significant advancements, focusing on third-generation semiconductor materials like silicon carbide (SiC) and gallium oxide (Ga2O3). NEXIC Successfully Completes First Wafer Batch in Its Fab On September 21, NEXIC announced that it had succes...

As per a recent announcement by Nanjing Release, the National Third-Generation Semiconductor Technology Innovation Center (Nanjing) has successfully developed a key technology for the manufacturing of trench-type silicon carbide (SiC) MOSFET chip after four years of independent research. This breakt...

As per Chongqing News Broadcast, the San'an-ST project, with a total investment of approximately CNY 30 billion, is close to completion. The substrate factory is expected to start production this month, two months ahead of schedule. The project, jointly developed by Chongqing San'an and ST, inclu...

According to TrendForce’s "2024 Global GaN Power Device Market Analysis Report", the development of the GaN power device industry is expected to accelerate once again as Infineon and Texas Instruments allocate more resources into GaN technology. In 2023, the market size of global GaN power devi...

On May 31, STMicroelectronics announced to build a new high-volume 200mm silicon carbide (SiC) facility in Catania, Italy, for power devices and modules as well as test and packaging. According to a report from WeChat account DRAMeXchange, the new plant aims to commence production in 2026 and ra...