Innoscience announced that the U.S. International Trade Commission ruled in favor of the company and against Infineon Technologies in a section 337 (patent infringement) investigation that was brought by Infineon against the Chinese GaN giant. The court ruled that Infineon’s U.S. Patent No. 9,070...

onsemi and Innoscience signed a memorandum of understanding (MoU) on December 2 to speed up the deployment of GaN power devices, starting with 40–200V offerings. onsemi expects sampling to begin in the first half of 2026, as noted in its press release. The partnership aims to combine onsemi’s ex...

As TSMC signals its exit from Gallium Nitride (GaN) wafer foundry services by 2027, another semiconductor powerhouse is seizing the opportunity. GlobalFoundries is accelerating its GaN initiatives, with moves that, according to EE Times, could establish it as a key U.S. hub for GaN fabrication. O...

In line with its strategy to focus on advanced chip technologies, TSMC is gradually retreating from lower-margin mature technology segments. Reflecting this shift, GlobalFoundries announced on November 10 a technology licensing deal with TSMC for 650V and 80V Gallium Nitride (GaN) technologies. Acco...

Gallium Nitride (GaN) has emerged as a major growth engine in the power electronics market. With superior material properties, GaN offers unique advantages in high-frequency, high-efficiency, and compact power applications, driving multiple industry segments into a new wave of technological transfor...