Global IDM leaders are charting contrasting strategies in the GaN sector. NXP reportedly plans to phase out its radio power product line and close its GaN RF fab in Arizona by 2027, while onsemi is taking an aggressive approach, partnering with GlobalFoundries to co-develop and produce advanced GaN ...

Recently, South Korea has announced plans to invest KRW 700 trillion (about USD 534 billion) to bolster the development of its semiconductor industry. The country aims to expand the massive semiconductor cluster under construction in Yongin, Gyeonggi Province, transforming it into a global hub fo...

On December 4, 2025, Jiufengshan (JFS) Laboratory announced a major technological breakthrough — the successful development of a gallium nitride (GaN) power module. Roughly the size of a thumb, these “black boxes,” each about as large as a million thumbnails, can be integrated into a 1-gigawat...

Innoscience announced that the U.S. International Trade Commission ruled in favor of the company and against Infineon Technologies in a section 337 (patent infringement) investigation that was brought by Infineon against the Chinese GaN giant. The court ruled that Infineon’s U.S. Patent No. 9,070...

onsemi and Innoscience signed a memorandum of understanding (MoU) on December 2 to speed up the deployment of GaN power devices, starting with 40–200V offerings. onsemi expects sampling to begin in the first half of 2026, as noted in its press release. The partnership aims to combine onsemi’s ex...