Subject


DRAM


2024-06-12

[News] Samsung Considers Hybrid Bonding a Must for 16-stack HBM

DRAM

According to the latest report by TheElec, though Samsung has been using thermal compression (TC) bonding until its 12-stack HBM, the company now confirms its belief that hybrid bonding is necessary for manufacturing 16-stack HBM. Regarding its future HBM roadmap, Samsung reportedly plans to prod...

2024-06-07

[News] The HBM4 Battle Begins! Memory Stacking Challenges Remain, Hybrid Bonding as the Key Breakthrough

DRAM

According to a report from TechNews, South Korean memory giant SK Hynix is participating in COMPUTEX 2024 for the first time, showcasing the latest HBM3e memory and MR-MUF technology (Mass Re-flow Molded Underfill), and revealing that hybrid bonding will play a crucial role in chip stacking. MR-M...

2024-06-06

[News] Micron Reportedly Targets 25% HBM Market Share by 2025

DRAM

Driven by the rapid growth in demand for high-bandwidth memory (HBM) fueled by artificial intelligence (AI), memory manufacturers are vying for market opportunities. According to a report from CNA, Micron has announced its target to achieve a 20% to 25% market share in HBM by 2025. Targeting the...

2024-06-06

[News] New Standard for DDR6 Memory to Come out Soon

DRAM

JEDEC (the Solid State Technology Association) recently confirmed that the long-used SO-DIMM and DIMM memory standards will be replaced by CAMM2 for DDR6 (LPDDR6 included). According to a report from WeChat account DRAMeXchange, the minimum frequency for DDR6 memory is 8800MHz, which can be incre...

2024-06-05

[News] Samsung Announced Breakthrough for Novel Memory Technology

DRAM

Recently, Samsung Electronics announced that the development of its 8nm eMRAM has almost been completed and process upgrades is underway as planned. According to a report from WeChat account DRAMeXchange, as a new type of non-volatile memory technology based on magnetic principles, eMRAM falls un...

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