With NVIDIA’s green light on 12-layer HBM3e, Samsung is ramping up its push into the HBM4 race. Shortly after revealing impressive HBM4e specs with per-pin speeds exceeding 13 Gbps, the memory giant is reportedly set to unveil HBM4 at its 2025 Samsung Tech Fair, taking place October 27–31 at t...

Even tech giants aren’t immune to U.S.-China trade strains — and the memory sector is no exception. After reportedly cutting over 300 jobs in China as part of a global retreat from its struggling mobile NAND business, Micron is now exiting China’s server chip market, Reuters reports, following...

Global DRAM capacity growth is expected to remain limited through 2026, as major DRAM makers in Korea and the U.S. focus on HBM and advanced-node transitions, Commercial Times reports. As the report highlights, this shift is tightening supply of conventional DDR4 and mainstream DRAM, with Taiwan’s...

At the 2025 OCP Global Summit, Samsung not only highlighted its HBM4e advancements—promising per-pin speeds above 13 Gbps and a peak throughput of 3.25 TB/s—but also unveiled its groundbreaking CXL Memory Module (CMM) roadmap, according to TechNews. Notably, TechNews reports that Samsung ...

The HBM4 race is heating up. Shortly after Micron showcased its HBM4 progress, shipping customer samples with over 2.8 TB/s bandwidth and pin speeds above 11 Gbps, Samsung unveiled impressive HBM4e details at the 2025 OCP Global Summit. According to SeDaily and TweaksTown, Samsung’s HBM4e, sla...