[News] GF, onsemi Join Forces to Co-Develop GaN Power Devices, Accelerating Ambitions with Samples Due 1H26

Global IDM leaders are charting contrasting strategies in the GaN sector. NXP reportedly plans to phase out its radio power product line and close its GaN RF fab in Arizona by 2027, while onsemi is taking an aggressive approach, partnering with GlobalFoundries to co-develop and produce advanced GaN power devices using GF’s 200 mm eMode GaN-on-silicon process, according to a company press release.

Notably, onsemi says the collaboration is on track to begin customer sampling in the first half of 2026 and quickly ramp up to volume production, according to Dinesh Ramanathan, senior vice president of corporate strategy.

As onsemi points out, the company will integrate its silicon drivers, controllers, and thermally enhanced packages with GF’s 650 V GaN technology to deliver devices with higher power densities. The joint portfolio will cover power supplies and DC-DC converters for AI data centers, onboard chargers and DC-DC converters for EVs, solar microinverters and energy storage systems, as well as motor drives and DC-DC converters for industrial, aerospace, defense, and security applications, the company notes.

Interestingly, this latest move aligns with both companies’ recent ambitions in the GaN sector and adds to their growing list of high-profile collaborations. Semiconductor Today reported in early December that onsemi and China’s Innoscience have signed a memorandum of understanding to fast-track the rollout of GaN power devices, starting with 40–200 V offerings. Customer sampling is expected in H1 2026, leveraging Innoscience’s 200 mm GaN technology to accelerate production and adoption, the report added.

On the other hand, GlobalFoundries is seizing the opportunity as TSMC signals its exit from GaN wafer foundry services by 2027. GlobalFoundries is accelerating its GaN initiatives, with moves that, according to EE Times, could establish it as a key U.S. hub for GaN fabrication.

Before teaming up with onsemi, GlobalFoundries revealed in a November press release that it had signed a technology licensing deal with TSMC for its 650 V and 80 V GaN processes. The high-voltage 650 V platform is aimed at power adapters, motor drives, and photovoltaic inverters, while the mid-voltage 80 V nodes target power systems in servers and laptops, expanding GF’s footprint across multiple GaN applications.

Read more

• [News] onsemi Partners With China’s Innoscience on Low/Mid-Voltage GaN, Sampling Expected in 1H26
• [News] GlobalFoundries Moves on GaN: TSMC and Navitas Ties Position U.S. as New GaN Production Hub

(Photo credit: onsemi)