Please note that this article cites information from The Wall Street Journal, Reuters, EE News Europe, CTech and GlobalFoundries. As TSMC, Intel, and Samsung Electronics race toward 2nm-class nodes, competitive tensions are also flaring in the mature-node segment—albeit in a more unexpected, leg...

Recently, ROHM announced that it will integrate its own R&D and manufacturing expertise in gallium nitride (GaN) power devices with the process technologies of long-term partner TSMC. The company plans to establish a dedicated production system at its Hamamatsu facility by 2027 to meet surging d...

Amid the surging global AI wave and the accelerating transition toward green energy, gallium nitride (GaN) industry is entering a pivotal golden growth period. According to TrendForce’s research, the global GaN power device market is projected to expand at a robust compound annual growth rate (CAG...

Global IDM leaders are charting contrasting strategies in the GaN sector. NXP reportedly plans to phase out its radio power product line and close its GaN RF fab in Arizona by 2027, while onsemi is taking an aggressive approach, partnering with GlobalFoundries to co-develop and produce advanced GaN ...

On December 11, the European Commission announced that it has approved EUR 623 million in German state aid for GlobalFoundries and X-FAB to support the construction of two new semiconductor manufacturing facilities in Germany. The aid consists of two grants, valued at EUR 495 million and EUR128 m...