Subject


GlobalFoundries


2026-05-07

[News] GlobalFoundries Reportedly Sees Silicon Photonics Revenue Doubling in 2026, Passing $1B by 2028

As major foundries including TSMC and Samsung accelerate their push into silicon photonics, specialty chipmaker GlobalFoundries continues to build steady momentum. According to the Investing.com transcript, management increasingly views silicon photonics as a core growth engine, expecting revenue to...

2026-03-27

[News] GlobalFoundries Sues Tower Semiconductor Over 11 Patents, Seeks Profit Damages and Import Ban

Please note that this article cites information from The Wall Street Journal, Reuters, EE News Europe, CTech and GlobalFoundries. As TSMC, Intel, and Samsung Electronics race toward 2nm-class nodes, competitive tensions are also flaring in the mature-node segment—albeit in a more unexpected, leg...

2026-03-10

[News] ROHM Secures GaN Technology License from TSMC, to Build Production Line by 2027

Recently, ROHM announced that it will integrate its own R&D and manufacturing expertise in gallium nitride (GaN) power devices with the process technologies of long-term partner TSMC. The company plans to establish a dedicated production system at its Hamamatsu facility by 2027 to meet surging d...

2026-02-02

[News] GaN Industry Enters a New Phase as TSMC Licenses GaN Technologies to VIS and GF

Amid the surging global AI wave and the accelerating transition toward green energy, gallium nitride (GaN) industry is entering a pivotal golden growth period. According to TrendForce’s research, the global GaN power device market is projected to expand at a robust compound annual growth rate (CAG...

2025-12-22

[News] GF, onsemi Join Forces to Co-Develop GaN Power Devices, Accelerating Ambitions with Samples Due 1H26

Global IDM leaders are charting contrasting strategies in the GaN sector. NXP reportedly plans to phase out its radio power product line and close its GaN RF fab in Arizona by 2027, while onsemi is taking an aggressive approach, partnering with GlobalFoundries to co-develop and produce advanced GaN ...

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