[News] NVIDIA’s SOCAMM2 Orders Likely Evenly Split Among Memory Makers in 2026, 1c Adoption in Focus

Amid circulating rumors that NVIDIA may drop SOCAMM1 (Small Outline Compression Attached Memory Module) in favor of SOCAMM2 due to technical challenges, Etoday and DealSite indicate that the U.S. AI chip giant has placed next-year SOCAM module orders with Samsung, SK hynix, and Micron, likely distributing allocations evenly across the three, alongside Rubin deployments.

If confirmed, the shift would indicate NVIDIA’s intent to lean more heavily on Korean suppliers, the reports suggest. Back in March, Micron touted itself as the world’s first memory maker delivering both HBM3E and SOCAMM for AI data center servers. Yet, as etnews reported, NVIDIA had originally slated SOCAMM1 for launch this year, only to face technical hurdles that delayed the project twice, stalling large-scale order fulfillment.

According to analysts cited by Etoday and DealSite, Samsung and SK hynix received only modest SOCAMM allocations in 2025, but they are projected to land substantial orders in 2026—around 100 billion Gb and 110 billion Gb, respectively.

Micron, in comparison, is reportedly expected to see its allocation rise from 50 billion Gb this year to 70 billion Gb next year, a much smaller increase.

Notably, the reports highlight that unlike HBM, where performance differences between suppliers are more pronounced, SOCAMM shows relatively small gaps across manufacturers. As a result, the focus shifts to cost efficiency, with the adoption of next-generation 10nm-class (1c) processes likely to be the key factor in driving competitiveness, as per the reports.

1c Adoption Roadmap

On the technology front, Samsung appears to be leading the way. Etoday and DealSite indicate that the company is already producing DRAM and HBM using its cutting-edge 1c DRAM process, and it may soon extend this advanced node to other applications, including SOCAMM.

On the other hand, DealSite suggests that SK hynix is set to start mass production of 1c LPDDR5X chips as soon as year-end. The company’s strategy, as per the report, is leveraging its proven 1b DRAM for core products like HBM4, while deploying 1c DRAM across general-purpose lines to broaden applications. After introducing the first 1c process 16Gb DDR5 last August, SK hynix has now expanded its advanced node portfolio with 1c-based GDDR7, the report notes.

For Micron, DealSite suggests that the company’s newly developed 1gamma (γ/1c) process is expected to underpin SOCAMM 2 modules, as the U.S. memory giant says the 1γ LPDDR5X can reach data speeds of 10.7 Gbps while cutting power consumption by up to 20%.

Read more

• [News] NVIDIA Rumored to Ditch SOCAMM1 for Next-Gen SOCAMM2, Opening Door for Samsung, SK hynix
• [News] SOCAMM Ignites a New Memory War After HBM — Samsung and SK hynix Join the Race

(Photo credit: SK hynix)