[News] Samsung’s 1c DRAM Yields Reportedly Reach up to 70%, Paving Way for HBM4 by Year-end

With hopes of turning the tide in the HBM4 era resting on its progress in 1c DRAM, Samsung has reportedly made a major leap in yield rates. According to Sedaily, the company recently achieved yields of 50–70% in tests for its sixth-generation 10nm-class DRAM (1c DRAM) wafers—a jump from the sub-30% levels seen last year.

Notably, unlike SK hynix and Micron, which are sticking with the more mature 1b DRAM for HBM4, Samsung is making a bold bet on next-gen 1c DRAM. As yields steadily improve, the company plans to ramp up 1c DRAM production at both its Hwaseong and Pyeongtaek sites, with investments set to begin by year-end, as per ZDNet.

Given DRAM’s role as a core component in HBM, this progress also bodes well for Samsung’s HBM4 mass production plans, which are reportedly targeted for later this year, the Sedaily report adds.

In response, TrendForce notes that the product cycle has yet to begin and that verification remains in its very early stages, adding that the situation warrants continued monitoring.

Redesign Turns the Tide?

According to Sedaily, although the company originally planned to begin mass production of its sixth-generation 10nm DRAM by the end of 2024, it took a bold step by redesigning the chip—accepting a delay of over a year to pursue better performance.

The report suggests that the new DRAMs will be produced at Samsung’s Pyeongtaek Line 4 and supplied for both mobile (LPDDR) and server applications. Meanwhile, the HBM4-related sixth-generation 10nm DRAM production facilities are reportedly located at Pyeongtaek Line 3.

It is worth noting that with its strong cash reserves and extensive manufacturing expertise, Samsung may revisit its old playbook—using economies of scale to cut costs and outpace rivals with sheer volume in the HBM4 era, according to industry sources cited by Sedaily.

SK hynix: Different Approach on 1c DRAM

However, unlike Samsung, SK hynix is reportedly taking a more cautious stance on the investment in 1c DRAM, according to South Korean media outlet the bell.

SK hynix plans to scale up 1c DRAM production only after starting mass production of HBM4E, which will use 1c as its core die. The upcoming HBM4, set for mass production in the second half of this year, will continue to rely on the more mature 1b DRAM process, the report adds.

Meanwhile, Sedaily indicates that SK hynix wrapped up development of its 1c DRAM back in August, 2024. Test yields have reportedly shown impressive results, averaging above 80% and reaching as high as 90%.

Amid robust demand, TrendForce forecasts total HBM shipments to surpass 30 billion gigabits in 2026. HBM4’s market share is expected to grow steadily as suppliers ramp up production, ultimately overtaking HBM3e as the mainstream solution by the second half of 2026.

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• [News] SK hynix Reportedly Slows 1c DRAM Investment, Shifts Focus to 1b DRAM for HBM3E/HBM4

(Photo credit: Samsung)