Another breakthrough has emerged in flash memory layer technology! A recent report cited by tom’s Hardware has suggested that at the upcoming International Solid-State Circuits Conference (ISSCC) in February of this year, Samsung Electronics will unveil the next-generation V9 QLC NAND solution, pu...

Japanese telecommunications operator NTT is reportedly collaborating with American chipmaker Intel and other semiconductor manufacturers to research large-scale production of next-generation semiconductor technology, which involves significantly reducing power consumption using optical technology. ...

Amid the AI trend, the significance of high-value-added DRAM represented by HBM continues to grow. HBM (High Bandwidth Memory) is a type of graphics DDR memory that boasts advantages such as high bandwidth, high capacity, low latency, and low power consumption compared to traditional DRAM chips. ...

NAND flash memory giants Kioxia and Western Digital (WD) were reported to be in negotiations with intentions to merge. However, the merger talks between Kioxia and WD were halted in October last year due to opposition from SK Hynix, the South Korean memory giant indirectly invested in Kioxia. As...

Sam Altman, the CEO of OpenAI, the developer of the ChatGPT, is reportedly expected to visit Korea on January 26th. Altman may hold meetings with top executives from Samsung Electronics and SK Group to strengthen their collaboration on High-Bandwidth Memory (HBM). According to sources cited by Th...