According to The Elec, KAIST Professor Kim Jeong-ho noted that HBF (High Bandwidth Flash)—NAND flash stacked like HBM—could become a decisive factor for the future of AI. As the report explains, HBF resembles HBM in structure, with dies stacked and linked by through-silicon vias (TSVs). The key ...

As global data center deployments accelerate, cloud giants are shifting their demand from training AI to inference AI, driving sustained growth in high-capacity memory requirements and causing memory supply constraints to migrate from DRAM to NAND. Supply chain sources reveal that following SanDisk'...

According to ZDNet, Samsung Electronics is ramping up efforts to secure production capacity for 1c DRAM as it aims to take an early lead in HBM4. Industry sources say the company plans to complete equipment investments for 1c DRAM at its Pyeongtaek Campus 4 (P4) by the first half of next year. Sa...

Following its June announcement to invest roughly $200 billion in U.S. manufacturing, Micron has taken a major step toward building its new New York plant. Syracuse.com reported that, for the first time, the memory giant has submitted a detailed site plan to the town of Clay for its proposed chipmak...

With DDR4 prices already firm on tight supply, the memory market is bracing for another rally as the electronics industry enters its seasonal peak in the second half, according to the Commercial Times. After sharp gains in Q3, contract prices are projected to rise a further 20%–50% in Q4, as Taiwa...