Subject


Semiconductors


2025-12-22

[News] China’s Moore Threads Unveils Huashan AI Chip, Reportedly Takes Aim at NVIDIA’s Hopper

Hot on the heels of the U.S. greenlighting H200 exports to China, the country’s so-called “little NVIDIA,” Moore Threads, has unveiled a new product lineup, headlined by the AI training and inference chip Huashan, aiming to challenge Team Green’s Hopper series, according to the South China M...

2025-12-22

[News] U.S. Think Tank Flags DUVi Loopholes as China Pushes Toward Advanced Chips Using Multipatterning

China is reported to have built an EUV lithography prototype by reverse-engineering older ASML tools, drawing industry attention. However, the larger concern may lie less in technological catch-up than in potential loopholes in existing export controls. According to a report from Center for a New Am...

2025-12-22

[News] TSMC’s Bold Pivot: Kumamoto Fab 2 Reportedly Leaps from 6nm to 2nm amid JASM Losses

While TSMC’s Arizona expansion races ahead, its Japan operations are moving at a slower pace, drawing close attention. Plans for Kumamoto Fab 2, however, may be shifting. A Nikkei report had suggested a move to 4nm—originally planned for 6nm and 7nm—but Mirror Media now reports a bolder plan: ...

2025-12-22

[News] DNP Advances TGV Glass Substrates, Eyes Early-2026 Sample Shipments, FY2028 Mass Production

With glass substrates gaining traction as a next-generation packaging solution, Japan’s Dai Nippon Printing (DNP) is stepping up its efforts. According to EE Times Japan, the company will begin phased operations of its newly established pilot line for TGV (Through-Glass Via) glass core substrates ...

2025-12-22

[News] GF, onsemi Join Forces to Co-Develop GaN Power Devices, Accelerating Ambitions with Samples Due 1H26

Global IDM leaders are charting contrasting strategies in the GaN sector. NXP reportedly plans to phase out its radio power product line and close its GaN RF fab in Arizona by 2027, while onsemi is taking an aggressive approach, partnering with GlobalFoundries to co-develop and produce advanced GaN ...

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