[News] World’s First Silicon Carbide Superjunction MOSFET Made its Debut
On September 7, Alkaid-Semi Technologies (Shanghai) Co., Ltd. officially launched the world’s first Silicon Carbide (SiC) superjunction MOSFET, marking a key milestone in transitioning this cutting-edge technology from the laboratory to commercial production.
The breakthrough product is the result of a five-year joint research initiative between Alkaid-Semi and the team led by Hao Yue, Academician of the Chinese Academy of Sciences and Professor at Xidian University. The team partnered with wafer foundry United Nova Technology Co., Ltd. (UNT) to develop the process platform, achieving seamless collaboration across research, academia, and manufacturing.
According to device specifications obtained by STAR Market Daily, the SiC superjunction MOSFET achieves an ultra-high breakdown voltage of 1,635V. At room temperature and an elevated temperature of 175°C, its specific on-resistance (RDS(on),sp) reaches1.27mΩ·cm2 and 1.5mΩ·cm2, respectively. Regarding thermal characteristics, the device exhibits zero temperature drift in on-resistance across the 25°C to 125°C range, with a temperature coefficient of less than 1.2× at 175°C.
Compared to conventional planar and trench SiC devices, which typically feature temperature coefficients between 1.8 times and 2.2 times, this innovation significantly mitigates high-temperature RDS(on) drift. Consequently, it is better tailored to high-temperature operating conditions in new energy vehicles (NEVs), energy storage systems, and high-voltage industrial equipment.
Traditional SiC MOSFETs generally suffer from a noticeable increase in on-resistance as temperature rises, causing additional power loss during high-power, long-duration operations.
By incorporating a charge-balance design, the SiC superjunction architecture alleviates the trade-off between breakdown voltage and on-resistance while optimizing performance across the entire temperature range, positioning itself as a vital technology roadmap for next-generation high-voltage SiC devices.
(Photo credit: FREEPIK)
