[News] Nanya Tech Reportedly Eyes Yunlin, Pingtung Fabs for 1d DRAM, Custom Memory, Investment to Top NT$300B

Taiwan’s memory makers are accelerating capacity expansion. According to UDN News, Nanya Technology reportedly plans to build new 12-inch wafer fabs in both Yunlin and Pingtung, targeting next-generation and customized DRAM. The investment is expected to exceed the NT$300 billion committed to Nanya’s Linkou Fab 5A, which is scheduled to begin mass production in 2028.

As the report indicates, Nanya may prioritize the Yunlin fab at the Yunlin Industrial Park, targeting fourth-generation 10nm-class (1d) and more advanced DRAM processes to meet growing memory demand.

With AI-driven demand keeping its existing capacity fully utilized, Nanya began seeking sites for new fabs in 2H25. The tight supply has also driven companies to secure future capacity in advance. As UDN News notes, SanDisk, Cisco, Kioxia, and SK hynix’s Solidigm invested a combined NT$78.72 billion in Nanya’s private placement in March to secure capacity, further supporting its expansion plans.

Nanya currently operates two 12-inch wafer fabs at the Nanlin Technology Park in Taishan, New Taipei City, with a combined monthly capacity of approximately 70,000 wafers. Both are currently running at full utilization, UDN News adds.

Meanwhile, as noted by MoneyDJ, Nanya is accelerating the first phase of its new Fab 5A, with wafer starts scheduled for 2H27. Monthly capacity is expected to reach 30,000 wafers in 2028 and increase to 35,900 in 2029. The fab will support 1b through 1e 10nm-class DRAM processes and adopt EUV lithography. To support the buildout, Nanya has raised its 2026 capital expenditure from NT$52 billion to up to NT$69.7 billion, with the additional spending earmarked for equipment prepayments.

Winbond Steps Up DRAM Capacity Expansion

Nanya is not alone in expanding capacity. According to Economic Daily News, Winbond has launched plans for P2, its second 12-inch wafer fab in Kaohsiung. Construction is set to begin in January 2027, followed by equipment installation in early 2029 and mass production in 4Q29. The fab will adopt EUV lithography to support next-generation 14nm and 12nm DRAM processes.

The second fab will feature approximately 30,000 square meters of cleanroom space, about twice the size of the first fab, with room to support monthly capacity of around 50,000–60,000 wafers. Equipment will be installed in phases based on market demand rather than all at once, preserving flexibility for future process upgrades and product adjustments, as Economic Daily News adds.

Demand for the future capacity is already emerging. Winbond President Pei-Ming Chen said customers are seeking to reserve P2 capacity, with discussions extending beyond long-term agreements through 2028 to supply arrangements for 2029 and even beyond 2030.

Read more

• [News] Winbond Says Customers Seek LTAs Through 2030; Adata Expects Even Tighter DRAM Supply in 2027
• [News] Nanya Tech Unveils Up to US$10.7B Fab 5A Investment Plan Through 2029; Targets 10nm-Class DRAM with EUV

(Photo credit: Nanya)