[News] World’s First Mass-Produced GaN-on-Silicon RF Chip for Smart Terminals Surpasses 5 Million Units Shipped

As per Science and Technology Daily, the first gallium nitride-on-silicon (GaN-on-Si) radio frequency (RF) chip for smart terminals to enter mass production has surpassed 5 million units shipped.

Developed independently by the 55th Research Institute of China Electronics Technology Group Corporation (CETC), the product marks the world’s first large-scale commercial deployment of GaN-on-Si RF chips in smart terminal applications, providing a key technological foundation for ubiquitous coverage and high-speed connectivity across integrated space-air-ground information networks.

Integrated space-air-ground information networks are widely regarded as a critical infrastructure layer for future 6G communications, commercial space systems, the low-altitude economy, and emergency communications. At the heart of these networks are low-cost, high-performance power amplifier (PA) chips, which directly influence transmission speed, coverage range, and network reliability. As China accelerates the development of commercial aerospace, low-altitude applications, 6G technologies, and the broader information and communications industry, demand for cost-effective, high-performance RF chips is growing rapidly.

The GaN-on-Si RF chip series combines high output power, superior efficiency, ultra-wideband capability, and high reliability. The chips are designed to meet the stringent efficiency and linearity requirements of RF power amplifiers used in integrated space-air-ground communications. By addressing key challenges in the industrialization of advanced RF chips, the technology is expected to support the deployment of seamless, always-on communication networks spanning space, air, and ground domains, while accelerating the realization of global connectivity and the Internet of Everything.

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