[News] Innoscience GaN Products Break Into Google’s Supply Chain

On February 3, Innoscience released an official announcement regarding a major business breakthrough with Google.

The company’s Gallium Nitride (GaN) products have successfully completed critical design-ins for Google’s relevant AI hardware platforms, and a formal compliance supply agreement has been signed.

As a global leader in the GaN industry, Innoscience’s collaboration with Google focuses on high-growth sectors such as AI servers and data centers.

According to the announcement, Innoscience will leverage its current project development and customer engagement to deepen collaboration with industry chain partners.

The company aims to advance the commercialization of its products in a compliant manner, fully meeting Google’s supply chain requirements for AI hardware as well as the global market’s urgent demand for high-performance, high-reliability GaN products.

According to Innoscience’s official website, the company is the world’s first Integrated Device Manufacturer (IDM) to achieve large-scale mass production of 8-inch GaN-on-Silicon.

Its Suzhou facility maintains a monthly capacity of 15,000 8-inch GaN wafers with a stable yield of 97%.

Its GaN products can increase server power density by 50%, reduce system components by 60%, optimize thermal conductivity in En-FCLGA packaging by 65%, and reduce system power consumption by over 50% for 100V-class solutions. By the end of 2025, Innoscience announced that its cumulative shipments of GaN power chips had reached 2 billion units.

In terms of global industrial layout, Innoscience has established deep partnerships with several renowned international corporations, covering core sectors such as AI computing, semiconductor manufacturing, automotive electronics, and industrial power supplies.

In April 2025, Innoscience announced a GaN technology development and manufacturing agreement with STMicroelectronics. The two parties are jointly developing GaN power technologies and implementing complementary manufacturing resource sharing.

Under the agreement, Innoscience can utilize STMicroelectronics’ European manufacturing capacity, while STMicroelectronics can rely on Innoscience’s Chinese capacity to jointly expand into AI data centers and automotive electronics, enhancing supply chain resilience and global delivery capabilities for both sides.

Subsequently, in November 2025, Innoscience announced that its 700V GaN wafers, featuring superior electrical performance and reliability, helped STMicroelectronics launch the VIPerGaN50W, a series of flyback power integrated devices based on GaN technology.

In October 2025, NVIDIA updated its 800V system supplier list on its official website, making Innoscience the only Chinese power semiconductor company to join the partnership list.

This collaboration focuses on high-end power architectures for AI data centers, jointly promoting the large-scale implementation of 800V DC power architectures.

Innoscience provides full-link GaN power solutions ranging from 15V to 1200V, supporting the leap from kilowatt to megawatt-level computing power to meet the efficient power needs of NVIDIA’s next-generation megawatt-scale computing infrastructure.

Additionally, Innoscience published a paper titled “Innoscience Advances 800VDC Architecture Using All-GaN Technology,” which systematically explains the compatibility of GaN technology with 800VDC architectures, providing solid technical support for the partnership and a reference path for global industrialization.

In December 2025, Innoscience signed a strategic Memorandum of Understanding (MoU) with onsemi.

This partnership integrates Innoscience’s mature 200mm GaN-on-Si processes with onsemi’s expertise in system integration and packaging.

The collaboration focuses on 40-200V medium-to-low voltage GaN power devices across multiple scenarios, including industrial, automotive, telecommunications infrastructure, and AI data centers.

Samples are planned for release in the first half of 2026 to jointly drive the mass production and market popularization of GaN products.

(Photo credit: Innoscience)