[News] GlobalFoundries Moves on GaN: TSMC and Navitas Ties Position U.S. as New GaN Production Hub

As TSMC signals its exit from Gallium Nitride (GaN) wafer foundry services by 2027, another semiconductor powerhouse is seizing the opportunity. GlobalFoundries is accelerating its GaN initiatives, with moves that, according to EE Times, could establish it as a key U.S. hub for GaN fabrication.

On November 10^th, GlobalFoundries, in a press release, announced a technology licensing deal with TSMC for 650V and 80V GaN processes. The high-voltage 650-V platform reportedly powers applications such as power adapters, motor drives, and photovoltaic inverters, while the mid-voltage 80-V nodes are designed for power systems in servers and laptops.

EE Times notes that TSMC, a pioneer in GaN-on-silicon, started developing GaN in 2011 and began mass production in 2015, overcoming challenges like epitaxial growth, wafer warpage, and contamination control. With TSMC’s high-reliability standards and JEDEC/MIL-STD certifications, GlobalFoundries stands to gain a significant boost from the agreement, the report suggests.

Navitas Picks a Side

Notably, shortly after GF secured a licensing deal with TSMC, California-based Navitas Semiconductor—which had already announced a strategic partnership with Taiwan’s Powerchip Semiconductor Manufacturing Corporation (PSMC) in early July to advance 200mm GaN-on-silicon technology—revealed a new foundry collaboration with GF. According to EE Times, development is scheduled for early 2026, with GaN semiconductor production expected later that year.

EE Times points out that Navitas has made its breakthrough in 2017 when TSMC-manufactured GaNFast power ICs entered volume production, powering fast chargers for brands like Anker, Lenovo, and Xiaomi. As the report suggests, Navitas has become a key TSMC GaN customer since then.

According to TrendForce, Navitas holds a 16.5% share of the global GaN power device market in 2024, trailing only Innoscience (29.9%) and ahead of EPC (12.4%), Infineon (10.3%), and Power Integrations (9.8%).

U.S. GaN Hub in the Making?

Interestingly, as EE Times notes, with Navitas—responsible for nearly half of TSMC’s GaN wafer output—pivoting to GF, the move could reflect a broader effort to relocate a strategic semiconductor supply chain to the U.S. while simultaneously building a resilient U.S.-based manufacturing footprint for GaN technology.

The idea appears to be gaining traction. In late 2024, GlobalFoundries announced an additional $9.5 million in U.S. federal funding to ramp up its GaN fabrication efforts. EE Times further notes that GF has received over $80 million in U.S. government support for its GaN-related initiatives.

Meanwhile, GF is also expanding its GaN capabilities. EE Times highlights that last year, the foundry acquired Tagore Technology’s GaN IP assets, reinforcing its push toward large-scale production of this wide-bandgap technology. According to the report, GF is also expected to capture a significant share of TSMC’s existing GaN wafer business, particularly from U.S.-based GaN chip vendors.

As China’s rivals, led by Innoscience, gain ground in GaN, the technology is increasingly a focus for the U.S. in strengthening its domestic semiconductor supply chain. GlobalFoundries’ expansion highlights this push to boost local capabilities in wide-bandgap semiconductors, supporting applications from AI data centers to electric vehicles.

Read more

• [News] GlobalFoundries Licenses TSMC’s 650V, 80V GaN Tech in Sign of Foundry Leader’s Retreat
• [News] Is the GaN Foundry Model Facing Trouble? China’s Innoscience Weighs In as TSMC Plans 2027 Exit

(Photo credit: GlobalFoundries)