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With NVIDIA’s green light on 12-layer HBM3e, Samsung is ramping up its push into the HBM4 race. Shortly after revealing impressive HBM4e specs with per-pin speeds exceeding 13 Gbps, the memory giant is reportedly set to unveil HBM4 at its 2025 Samsung Tech Fair, taking place October 27–31 at the Samsung Semiconductor Complex in Yongin, Gyeonggi Province, according to SeDaily.
The report suggests that at the event, Samsung’s Device Solutions (DS) division is set to unveil its 6th-generation 12-layer HBM4, slated for mass production later this year. As per SeDaily, while HBM3e previously lagged behind SK hynix and Micron in NVIDIA quality certifications, Samsung aims to show that HBM4 has closed the gap in both quality and certification speed.
According to SeDaily, in addition to HBM4, Samsung’s DS division will also highlight world’s smallest 200-megapixel technology and semiconductor-focused AI innovations at the event. The DX division will unveil a 115-inch Micro RGB TV, aimed at staying ahead of aggressive Chinese competitors, while Samsung Research plans to present its vision for the Galaxy mobile ecosystem through on-device AI agents, the report adds.
Interestingly, Samsung’s 2025 Tech Fair, themed “REBOOT: DESIGNING WHAT’S NEXT,” coincides with this month’s Asia-Pacific Economic Cooperation (APEC) CEO Summit in South Korea, where NVIDIA CEO Jensen Huang is reportedly set to attend. According to Reuters, during the October 28–31 summit, Huang is expected to meet with top executives from Samsung Electronics and SK Hynix, both key suppliers of memory chips for AI data centers.
Notably, Samsung unveiled impressive HBM4e details at the 2025 OCP Global Summit last week. According to SeDaily and TweaksTown, Samsung’s HBM4e, slated for 2027, targets per-pin speeds exceeding 13 Gbps, delivering a maximum throughput of 3.25 TB/s—about 2.5 times faster than current HBM3e.
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(Photo credit: Samsung)