Driven by AI, next-generation advanced NAND has become the mainstream. As traditional vertical stacking encounters physical limitations and performance degradation, the industry's focus is shifting toward architectural innovation. By leveraging heterogeneous integration technology—which separates the manufacturing of logic circuits and memory before vertically bonding them—manufacturers can overcome transmission bottlenecks and secure a future competitive advantage.

Key Highlights

• AI Demand: Advanced NAND is now the industry's core focus for high-end storage.
• Physical Limits: Vertical stacking faces severe etching and signal delay hurdles.
• Architecture Shift: Logic and memory are built separately, then hybrid bonded.
• Future Focus: Success relies on heterogeneous integration and foundry partnerships.

Table of Contents

1. 2XX-Layer Technology Takes Center Stage as AI Drives Technological Upgrades
   • Comparison of 3XX-L Product Specifications Among the Top Six NAND Flash Suppliers
2. The Performance Limits of CMOS Stacking: 300 Layers Represents a Major Hurdle
   • Read/Write Performance Degradation Due to Increased Layer Counts (Illustration of RC Delay)
3. Base Die/Peripheral Die and CBA Architecture: Reassignment of Labor between Logic and Memory
   • Cross-Sectional Comparison of NAND Architectures: Conventional CUA v.s. CBA/Xtacking
4. From Race of Stacking to Competition of Architectures: Industry Logic after 3XX-L
   • Evolution (ONFI) of Speed (MT/s) for NAND I/O Interfaces

<Total Pages: 6>