Toshiba recently said that the memorandum of understanding (MOU) signed by its subsidiary, Toshiba Electronic Devices & Storage Corporation, with China’s SICC in August 2025, covering collaboration on silicon carbide (SiC) power semiconductor wafers, was terminated in September 2025 after furt...

According to TechNews, citing Nikkei, Japan has long held a leading position in power semiconductors, but the swift rise of Chinese newcomers is now posing a serious challenge. The report notes that Japan’s slow progress in industry consolidation and strategic coordination is a key factor limiting...

Following the acceptance of the IPO application by Tianyu Semiconductor on the main board of the Hong Kong Stock Exchange (HKEX) on December 23, 2024, two other Chinese third-generation semiconductor companies, Innoscience and SICC, have also made moves towards listing on the Hong Kong market. Among...

On November 13, at Semicon Europe 2024 in Munich, Germany, China's silicon carbide (SiC) substrate manufacturer, SICC, announced the launch of the industry's first 300mm (12-inch) silicon carbide substrate. This marks a significant step into the era of ultra-large silicon carbide substrates. SICC...

On March 27, Wolfspeed announced the topping out of construction at the its largest and most advanced John Palmour Manufacturing Center for Silicon Carbide. According to its introduction, the "John Palmour Silicon Carbide Manufacturing Center" has a total investment of USD 5 billion, covering 44...