According to TrendForce's latest memory spot price trend report, regarding DRAM, the spot market shows prices of DDR4 products registering larger hikes compared with prices of DDR5 products due to the anticipation of supply tightening in the future. As for NAND flash, buyers have slowed down inquiri...

As memory giants reportedly brace for price hikes on DDR4 and DDR5, NAND suppliers are also seeing stronger-than-expected momentum in Q2. According to Commercial Times, the top five NAND Flash makers have cut production, fueling an upswing in memory pricing. The report suggests that major NAND ma...

On May 7, NEO Semiconductor announced a major breakthrough in its 3D X-DRAM technology series: the industry’s first 3D X-DRAM cell structures based on 1T1C and 3T0C architectures. According to NEO Semiconductor, the new technology is designed to deliver unprecedented density, power efficiency, ...

As memory giants accelerate development in HBM4 and high-layer NAND, hybrid bonding technology is drawing heightened attention. South Korean leaders Samsung Electronics and SK hynix remain behind in key patents, according to a report from ZDNet. The report highlights that Samsung and SK hynix have d...

Fudan University has achieved a key breakthrough in the field of integrated circuits. The research team led by Zhou Peng and Liu Chunsen has, by constructing a quasi-2D Poisson model, theoretically predicted a phenomenon called "super-injection," breaking through the existing theoretical limits of m...