On September 12, Japan’s Ministry of Economy, Trade and Industry (METI) announced a subsidy of up to JPY 536 billion for Micron’s DRAM plant in Hiroshima. The funding will support new plant construction, production, and R&D, with a particular focus on high-bandwidth memory (HBM) and extreme ...

According to TrendForce's latest memory spot price trend report, regarding DRAM, although DDR4 supply remains tight, the price surge has made it difficult for buyers to keep up, leading to limited trading volumes despite the price hikes. In NAND, the spot market is seen with price increases, recover...

Micron Discusses HBM and Advanced Packaging in the AI Era Recently, Yulin Chang, Vice President of Advanced Packaging and Testing Operations at Micron Taiwan, outlined the development of HBM and advanced packaging in the AI era. Chang noted that in the past, GPU was connected to GDDR6 via PCB. To...

While Micron reportedly passed NVIDIA’s verification and became the first of the big three memory makers to ship SOCAMM (Small Outline Compression Attached Memory Module), the U.S. AI chip giant may revise its adoption plan for this new low-power DRAM (LPDDR) server memory module—a move that cou...

According to The Elec, KAIST Professor Kim Jeong-ho noted that HBF (High Bandwidth Flash)—NAND flash stacked like HBM—could become a decisive factor for the future of AI. As the report explains, HBF resembles HBM in structure, with dies stacked and linked by through-silicon vias (TSVs). The key ...