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[News] SK hynix Reportedly Breaks Ground on First U.S. Advanced Packaging Plant in Indiana, Eyes 2H28 Production


2026-04-22 Semiconductors editor

While Samsung Electronics is accelerating its 2nm mass production ramp at its Taylor facility, SK hynix is simultaneously stepping up its advanced packaging push in the U.S. According to Herald Economy, the company has officially broken ground on its first semiconductor plant in the country—the Indiana fab—marking a major milestone roughly two years after unveiling its 2024 investment plan.

Notably, the report suggests that the facility is scheduled to begin full-scale operations in the second half of 2028, primarily targeting mass production of next-generation AI memory products, including HBM. Under the roadmap, 7th- and 8th-generation HBM—namely HBM4E and HBM5—are expected to become the core products manufactured at the site, as per Herald Economy.

According to industry sources cited by the report, SK hynix notified local communities on the 17th that it has begun foundation piling work, which involves driving piles into the ground ahead of structural building work. With piling expected to continue for several months, the company is widely seen as moving toward vertical construction as early as the second half of 2026, the report adds.

Beyond its U.S. expansion in Indiana—where SK hynix has committed approximately $3.87 billion (about KRW 5.2 trillion) to build an AI memory-focused advanced packaging base—the company is also doubling down on domestic capacity. According to Herald Economy, SK hynix is investing roughly KRW 19 trillion in Cheongju, South Korea, to construct a next-generation advanced packaging fab (P&T7).

The Cheongju facility is designed to meet surging HBM demand and is scheduled for completion by the end of 2027, the report adds.

DRAM Capacity Ramp-Up Accelerates in Parallel

On the other hand, SK hynix is also pressing ahead with its DRAM capacity expansion. According to The Elec, the company plans to begin equipment installation at its M15X fab in Cheongju once the Phase 4 cleanroom opens in March. Meanwhile, the first fab in the Yongin semiconductor cluster is set to complete its cleanroom in February 2027, marking another step forward in its broader capacity ramp-up, the report adds.

It is worth noting that cutting-edge chipmaking tools is also playing a key role. As highlighted by the Korea Herald, SK hynix plans to install around 20 extreme ultraviolet (EUV) lithography systems from ASML across key production lines, reinforcing its shift toward next-generation DRAM manufacturing processes.

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(Photo credit: SK hynix)

Please note that this article cites information from Herald Economy, The Elec, and the Korea Herald.

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