[News] Innoscience Scores Major Patent Win Against Infineon as ITC Rules No Infringement

Innoscience announced that the U.S. International Trade Commission ruled in favor of the company and against Infineon Technologies in a section 337 (patent infringement) investigation that was brought by Infineon against the Chinese GaN giant. The court ruled that Infineon’s U.S. Patent No. 9,070,755 covering electrode design had not been infringed by any Innoscience products, and Infineon’s other U.S. Patent No. 9,899,481 covering package design was found not infringed by all current Innoscience products based on the company’s newest GaN process technology, with only certain legacy high voltage products implicated. This action by the ITC effectively invalidated Infineon’s attempt to use these patents to restrict Innoscience’s development.

Due to the advantages of GaN over legacy silicon-based power devices, GaN power devices are being widely adopted in electric vehicles, renewable energy systems, and AI data-center power architectures. Given GaN’s strategic importance in these markets—and Innoscience’s strong competitive position—certain industry players have attempted to slow Innoscience’s momentum through patent litigation. However, this effort failed entirely. Instead of hindering Innoscience’s progress, Infineon’s lawsuit only brought more attention to Innoscience and its technology leadership. This outcome represents the success of a next-generation industry challenger over a traditional incumbent—and a meaningful win for GaN technology.

As noted by Cailian press, Infineon filed four patent infringement claims with the ITC in July 2024, but later withdrew all allegations related to two of the patents during the review process. The ITC’s determination that the remaining two patents are also not infringed marks another key victory for Innoscience in this patent battle and is expected to clear the path for the global development of the GaN industry.

Innoscience holds leading position in 8-inch GaN. According to STAR Market Daily, the company is the world’s first to achieve mass production of 8-inch silicon-based GaN wafers and remains the only firm globally offering a full voltage range of silicon-based GaN products at industrial scale. By the end of 2024, its monthly GaN wafer output had reached 13,000 wafers with a yield rate exceeding 95%, the report adds.

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(Photo credit: Innoscience)