[News] Two New SiC Wafer Fabs Announced New Construction Phase

Mitsubishi Electric: 8-Inch SiC Wafer Fab Completed, Production Accelerating

Mitsubishi Electric has announced the completion of its new 8-inch silicon carbide (SiC) power semiconductor manufacturing facility in Kikuchi, Kumamoto Prefecture, Japan. The company held an official completion ceremony on October 1, 2025, marking the end of major construction.

As planned, the facility will immediately enter the preparation phase, with pilot production slated to begin in November 2025 using 8-inch SiC substrates. Full-scale mass production is targeted for 2027, laying the groundwork for Mitsubishi Electric’s next-generation SiC business expansion.

The new fab represents a cornerstone of Mitsubishi Electric’s long-term growth strategy. Announced in March 2023 with an initial investment of approximately JPY 100 billion, the expansion aims to address surging demand from the electric vehicle (EV) market. The six-story facility covers about 42,000 square meters and focuses on front-end SiC wafer processing, incorporating a fully automated production system.

Despite the completion milestone, Mitsubishi Electric is adopting a more flexible and cautious capacity ramp strategy. As EV market growth has slightly lagged initial forecasts, company president Kei Uruma revealed during the ceremony that certain equipment enhancement plans for the new fab will be deferred to fiscal 2031 and beyond. He emphasized that production line installations will be reviewed based on market conditions and other factors, underscoring the company’s intent to balance aggressive expansion with prudent risk management.

Mitsubishi Electric aims to increase its SiC production capacity fivefold from fiscal 2022 levels by fiscal 2026, and to raise the share of SiC products to over 30% of its total power semiconductor business by fiscal 2030 — signaling a full transition beyond its existing 6-inch SiC production lines established in the late 2010s.

SiCSem Launches India’s First End-to-End SiC Chip Manufacturing Facility

In a landmark step for India’s semiconductor ambitions, SiCSem officially broke ground on the country’s first end-to-end silicon carbide (SiC) semiconductor manufacturing facility on November 1 in Odisha.

With a total planned investment of approximately INR 206.7 billion, the project demonstrates strong confidence in India’s domestic high-tech manufacturing capabilities. The facility targets an annual processing capacity of 60,000 SiC wafers and is expected to commence full-scale operations between 2027 and 2028.

As an emerging Indian semiconductor company, SiCSem’s initiative carries major strategic significance. It will reduce India’s dependence on foreign SiC supply chains and strengthen the nation’s self-reliance in key sectors such as electric vehicles (EVs) and renewable energy systems — marking a pivotal milestone in South Asia’s semiconductor landscape.

(Photo credit: Mitsubishi Electric)