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[News] China’s First 12-Inch Polycrystalline Silicon Carbide Substrate Unveiled


2026-10-29 Semiconductors editor

Hunan Titan Future Technology has developed China’s first 12-inch polycrystalline silicon carbide (SiC) substrate, according to an October 26 report by Changsha Evening News.

Based in Wangcheng Economic and Technological Development Zone in Changsha, the company has designed the substrate for applications requiring high thermal conductivity, including AI computing chips and advanced packaging, where heat dissipation from high-power chips is a growing challenge.

The substrate offers thermal conductivity exceeding 280 W/(m·K) and is designed to serve as a heat-conducting base within semiconductor packaging structures, helping alleviate heat buildup during high-power chip operation. The product is currently undergoing sample validation and small-batch trial production, and has completed validation by leading companies, according to the report.

Titan Future’s technology builds on research conducted by the Powder Metallurgy Research Institute at Central South University. Its core team includes several doctoral graduates from the university. The company had previously completed the domestic development of 6-inch and 8-inch polycrystalline SiC substrates.

Unlike single-crystal SiC substrates primarily used for epitaxial growth in power devices, Titan Future’s polycrystalline SiC substrate is positioned mainly for thermal management. It can also be used as a carrier for crystal growth and as a base for high-temperature semiconductor processing.

On September 28, a project invested in by Titan Future Semiconductor (Jiangsu) broke ground in Jinhu Economic Development Zone, Jiangsu Province. The project will establish an integrated manufacturing base for high-purity, high-density SiC components and polycrystalline substrates.

The facility will primarily produce high-performance SiC components and tantalum carbide (TaC)-coated products for semiconductor applications. Once fully operational, it is expected to have annual production capacity of 200,000 units of these products, generate CNY 600 million in annual sales, and contribute an additional CNY 30 million in tax revenue.

Titan Future plans to build facilities in Changsha, Xiamen and Jinhu, Jiangsu, with different roles across its operations. Changsha will serve as its technology development and application incubation center, while the Xiamen facility is planned to have annual capacity for 500,000 composite SiC substrates.

(Photo credit: FREEPIK)

Please note that this article cites information from Changsha Evening News.



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