[News] Samsung, SK hynix Reportedly Push China NAND Upgrades Beyond 200 Layers as YMTC Competition Heats Up

As AI-driven demand extends from DRAM to NAND, Samsung and SK hynix are upgrading their key Chinese facilities. According to Reuters, Samsung plans to shift its Xi’an plant from roughly 200-layer to 286-layer V9 NAND, while SK hynix, already authorized to produce up to 240-layer NAND in Dalian, may seek U.S. approval for R&D on 300-plus-layer technology.

China remains a major NAND production hub for both companies, underscoring the stakes of their factory upgrades. TrendForce estimates that China roughly account for 30–35% of Samsung’s total NAND output and an even higher 40–45% for SK hynix.

Adding urgency to these upgrades is mounting competition from China’s YMTC. According to Reuters, the Chinese chipmaker, whose NAND lineup is dominated by 160- and 232-layer products, is already producing 294-layer chips in limited volumes and plans to push beyond 300 layers.

U.S. Export Curbs Complicate China Fab Upgrades

Yet U.S. export restrictions remain a major hurdle. According to Reuters, both chipmakers must obtain annual licenses to install U.S.-made equipment at their Chinese plants, while Washington indicated in 2025 that it would not approve technology upgrades or capacity expansions there.

Samsung and SK hynix confirmed to Reuters that upgrades were underway in close coordination with Washington, but declined to disclose detailed production plans. Citing sources familiar with the matter, the report notes that both are seeking to produce NAND with more than 200 layers at their Chinese facilities, bringing their technology closer to production standards in South Korea.

For more details, Reuters suggests that under an internal project dubbed “Monami,” French for “my friend,” Samsung plans to transition the facility to 286-layer V9 NAND. SK hynix, meanwhile, is reportedly planning to upgrade its Dalian facilities from the current 192-layer NAND technology to 240 layers or more.

Samsung, SK hynix’s NAND Technology Race in Focus

Beyond China, both memory giants are advancing their NAND technologies. According to Seoul Economic Daily, Samsung has shifted roughly 60% of its V-NAND capacity to V9 (286 layers), ramping up shipments to NVIDIA while also beginning mass production and supply of V10 NAND. Development of its next-generation V11, targeting around 500 layers, is also accelerating.

On the other hand, Bloter notes that SK hynix is stepping up its shift to 321-layer NAND to meet growing demand. The technology became its largest NAND production segment in 2Q26, with roughly half of its domestic NAND capacity expected to transition to 321-layer products by year-end, according to the report.

Read more

• [News] SK hynix Reportedly Restarts Dalian Fab 2, Targets 1H27 Mass Production and 50% China NAND Capacity Boost
• [News] Samsung Reportedly Advances Xi’an to 236-Layer NAND; SK hynix Eyes Dalian Upgrade Amid Tight Supply

(Photo credit: Samsung)