[News] UNT Invests CNY 2.13 Billion in Advanced Chip Unit, Advances 12-Inch Fab Project

On September 21, United Nova Technology Co., Ltd. (UNT) announced that it has completed a cumulative paid-in capital contribution of CNY 2.129 billion to its subsidiary, UNT Advanced, marking steady progress in capital deployment for its latest manufacturing expansion.

On June 9, 2026, UNT signed a Joint Venture Framework Agreement with UNT Advanced and Zhejiang Shaoxing HangShao Air-Port Economic Zone Industrial Development Group Co., Ltd. Under the agreement, the parties established UNT Advanced as the operating entity for UNT’s 12-inch automotive-grade mixed-signal chip manufacturing project, known as the Phase IV Project.

Through three subsequent rounds of equity financing, UNT Advanced introduced several institutional investors. Capital subscriptions across all participating parties have now been fully completed, raising UNT Advanced’s total registered capital to CNY 8.483 billion.

With a total planned investment of approximately CNY 20 billion, the Phase IV Project aims to establish a 12-inch integrated circuit mixed-signal production line with a monthly capacity of 50,000 wafers. The facility’s technology roadmap covers 40/28nm MCU/DSP platforms, 90/55nm BCD and DrMOS analog IC process nodes, as well as 55nm silicon photonics (SiPh) and laser driver ICs.

Notably, UNT’s 55nm silicon photonics process platform targets three primary high-growth segments: data center optical interconnects, AI cluster communications, and high-speed optical transceivers.

Building on the volume production of its Phase I 8-inch SiPh line and the 12-inch 90nm SiPh technology developed at its Phase III manufacturing base, UNT’s Phase IV Project will scale up 55nm SiPh capacity to further reinforce its position in next-generation optical interconnect solutions.

As one of China’s leading pure-play foundries, UNT has already brought its Phase III project into commercial operation. The company’s Phase I line focuses on 8-inch silicon-based wafers, while Phase II manufactures silicon power devices and expands into SiC MOSFETs, GaAs VCSEL lasers, and power driver ICs. The Phase III base houses its 12-inch mixed-signal IC manufacturing operations.

(Photo credit: UNT)