[News] World’s First Ampere-Level Vertical Gallium Oxide MOSFET Developed

Gallium oxide, a representative fourth-generation semiconductor material, is attracting attention for high-voltage, high-efficiency power devices due to its ultra-wide bandgap, high breakdown field, and low conduction losses. However, challenges in p-type doping have long hindered its development for high-power applications and commercialization. Vertical gallium oxide MOSFETs have generally faced limitations in current handling, breakdown voltage, and leakage current.

Shanghai-based Jiachi Power Technology has recently achieved a milestone in this field.

The company, located in Shanghai’s fourth-generation semiconductor industry cluster, has completed the first phase of wafer fabrication and validation for its vertical gallium oxide MOSFET chips.

Through device-structure innovations and in-house process development, the team has developed what it describes as the world’s first enhancement-mode vertical gallium oxide MOSFET with an on-state current exceeding 1 A and a breakdown voltage above 900 V, setting new records in several key performance metrics based on publicly available data.

Stable and controllable p-type doping has long been a major global challenge for gallium oxide MOSFETs targeting high-power applications. As a result, previously published academic literature and industry reports had not documented vertical gallium oxide MOSFETs with on-state currents exceeding 1 A, constraining progress toward commercialization.

To address this challenge, Jiachi has pursued advances in both device architecture and fabrication processes. The team developed proprietary MOSFET cell and termination structures, precisely controlling internal device geometry and electric-field distribution to improve stability and breakdown performance.

Furthermore, the company developed a self-aligned ion implantation process for the MOSFET channel, addressing challenges in precise channel formation and uniform dopant control. This work established a dedicated process flow for high-power gallium oxide devices, followed by a complete initial fabrication run and electrical characterization.

Measured results showed a threshold voltage of 3.9 V, enabling stable enhancement-mode operation. The device achieved an on-state current of 1.2 A and a specific on-resistance of 33 mΩ·cm².

According to the company’s review of publicly available global research and industry results, this is the first reported vertical gallium oxide MOSFET to achieve an on-state current above 1 A.

Designed for a 750 V operating class, the device also demonstrated a measured breakdown voltage exceeding 900 V, with leakage current below 3 μA. The leakage performance approaches that of mature commercial silicon and silicon carbide power devices, addressing a key limitation of gallium oxide technology.

The proprietary self-aligned ion implantation process also establishes a foundation for manufacturing ampere-level and higher-current gallium oxide MOSFETs, helping fill a process-development gap in high-power devices.

The technical team said the results validate the feasibility of its original device architecture and in-house ion implantation approach, marking an important step toward translating gallium oxide power devices from laboratory validation to commercial engineering.

Looking ahead, plans to further optimize device structures, process parameters, and epitaxial material integration to improve reliability, consistency, and overall performance. The company will also advance chip development, sample delivery for customer evaluation, and the establishment of production-ready processes.

(Photo credit: FREEPIK)